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Effect of annealing on EPR spectra of Ti-Si-C-N samples

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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Two nanocrystalline samples of TiC+SiC+20%C (sample 1) and Si3N4+Si(C,N)+Ti(C,N)+1%C (sample 2) were prepared by non-hydrolytic sol-gel method. The latter sample was produced from sample 1, by subjecting it to additional annealing at high temperature. XRD measurements showed the presence of aggregates of cubic SiC+TiC nanoparticles (10 to 30 nm in size). In both samples, a very narrow electron paramagnetic resonance (EPR) line originating from localized magnetic centers was centered at geff2. At T = 130 K, we registered the linewidths DHpp = 1.41(2) G and DHpp = 2.92(2) G for the sample without and with thermal annealing, respectively. For the non-annealed sample, the resonance line was fitted by a Lorentzian line in the low temperature range, and by a Dysonian line above 70 K, which indicates a significant change in electrical conductivity. Therefore, thermal annealing can significantly improve the transport properties of samples. An analysis of the temperature dependence of the EPR parameters (g-factor, linewidth, integrated intensity) showed that thermal annealing has a significant impact on the reorientation processes of localized magnetic centers.
Słowa kluczowe
Wydawca
Rocznik
Strony
23--31
Opis fizyczny
Bibliogr. 40 poz.
Twórcy
autor
autor
autor
  • Department of Solid State Physics, School of Physics, Faculty of Sciences, University of Athens, Panepistimiopolis, 15 784 Zografos, Athens, Greece
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0020-0004
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