Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3

• Autorzy: Gryglewicz J. , Oleszkiewicz W. , Ramiączek-Krasowska M. , Szyszka A. , Prażmowska J. , Paszkiewicz B. , Paszkiewicz R. , Tłaczała M.
• Języki publikacji: EN

Abstrakty

EN

This work reports on the latest results of etching of different AlxGa1??xN/GaN heterostructures in relation to percentage composition of aluminum. The etching processes were carried out in a reactive ion etching (RIE) system using the mixture of BCl3/Cl2/Ar. The topography of the heterostructures surfaces and the slope were controlled using atomic force microsopy (AFM) technique. The photoluminescence spectra were used to determine the surface damage and to calculate the Al content in AlGaN/GaN heterostructures commonly used for high electron mobility transistors (HEMTs) fabrication.

Słowa kluczowe

EN

plasma; RIE; reactive ion etching; Cl2; BCl3; HEMT

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2011
• Tom: Vol. 29, No. 4
• Strony: 260--265
• Opis fizyczny: Bibliogr. 17 poz.

Twórcy

autor

Gryglewicz J.

autor

Oleszkiewicz W.

autor

Ramiączek-Krasowska M.

autor

Szyszka A.

autor

Prażmowska J.

autor

Paszkiewicz B.

autor

Paszkiewicz R.

autor

Tłaczała M.

• Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372 Wroclaw

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