PL EN


Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników
Tytuł artykułu

Small-signal circuit modeling for a semiconductor optical amplifier monolithically integrated with a sampled grating distributed Bragg reflector laser

Autorzy
Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
In this paper, a small-signal equivalent circuit model of a semiconductor optical amplifier (SOA) monolithically integrated with a sampled grating distributed Bragg reflector (SGDBR) laser is presented. To take into account the wavelength dependence of the circuit parameters of our model, the extraction of parameters has been performed by fitting the circuit model including parasitic effect with measured S-parameters of the integrated device for different operating wavelengths of the SGDBR laser. The optical frequency chirp caused by the current modulation of the SOA section has been simulated by the obtained small-signal circuit model.
Czasopismo
Rocznik
Strony
55--68
Opis fizyczny
bibliogr. 17 poz.
Twórcy
autor
autor
autor
autor
  • School of Science, Hubei University of Technology, Wuhan, 430068, China
Bibliografia
  • [1] SAN-LIANG LEE, HEIMBUCH M.E., COHEN D.A., COLDREN L.A., DENBAARS S.P., Integration of semiconductor laser amplifiers with sampled grating tunable lasers for WDM applications,IEEE Journal of Selected Topics in Quantum Electronics 3(2), 1997, pp. 615–627.
  • [2] WARD A.J., ROBBINS D.J., BUSICO G., BARTON E., PONNAMPALAM L., DUCK J.P., WHITBREAD N.D.,WILLIAMS P.J., REID D.C.J., CARTER A.C., WALE M.J., Widely tunable DS-DBR laser with monolithically integrated SOA: Design and performance, IEEE Journal of Selected Topics in Quantum Electronics 11(1), 2005, pp. 149–156.
  • [3] NIELSEN M.L., SUDO S., MIZUTANI K., OKAMOTO T., TSURUOKA K., SATO K., KUDO K., Integration of functional SOA on the gain chip of an external cavity wavelength tunable laser using etched mirror technology, IEEE Journal of Selected Topics in Quantum Electronics 13(5), 2007, pp. 1104–1111.
  • [4] HANSEN P.B., RAYBON G., WIESENFELD J.M., BURRUS C.A., LOGAN R.A., TANBUN-EK T., TEMKIN H.,Optical demultiplexing at 6 Gb/s using a semiconductor laser amplifier as an optical gate,IEEE Photonics Technology Letters 3(11), 1991, pp. 1018–1020.
  • [5] MORK J., MECOZZI A., EISENSTEIN G., The modulation response of a semiconductor laser amplifier,IEEE Journal of Selected Topics in Quantum Electronics 5(3), 1999, pp. 851–860.
  • [6] TUCKER R.S., POPE D.J., Microwave circuit models of semiconductor injection lasers, IEEE Transactions on Microwave Theory and Techniques 31(3), 1983, pp. 289–294.
  • [7] CHU C.Y.J., GHAFOURI-SHIRAZ H., Analysis of gain and saturation characteristics of a semiconductor laser optical amplifier using transfer matrices, Journal of Lightwave Technology 12 (8), 1994,pp. 1378–1386.
  • [8] HUI LV, TAN SHU, YONGLIN YU, DEXIU HUANG, LEI DONG, RUIKANG ZHANG, Fast power control and wavelength switching in a tunable SOA-Integrated SGDBR laser, in 14th OptoElectronics and Communications Conference (OECC 2009), 2009, paper ThPD4.
  • [9] HALE P.D., WILLIAMS D.F., Calibrated measurement of optoelectronic frequency response, IEEE Transactions on Microwave Theory and Techniques 51(4), 2003, pp. 1422–1429.
  • [10] JIANJUN GAO, XIUPING LI, FLUCKE J., BOECK G., Direct parameter-extraction method for laser diode rate-equation model, Journal of Lightwave Technology 22(6), 2004, pp. 1604–1609.
  • [11] YIKAI SU, SIMSARIAN J.E., LIMING ZHANG, Improving the switching performance of a wavelength-tunable laser transmitter using a simple and effective driver circuit, IEEE Photonics Technology Letters 16(9), 2004, pp. 2132–2134.
  • [12] DURHUUS T., MIKKELSEN B., STUBKJAER K.E., Detailed dynamic model for semiconductor optical amplifiers and their crosstalk and intermodulation distortion, Journal of Lightwave Technology 10(8),1992, pp. 1056–1065.
  • [13] HARDER C., VAHALA K., YARIV A., Measurement of the linewidth enhancement factor α of semconductor lasers, Applied Physics Letters 42(4), 1983, pp. 328–330.
  • [14] ARAKAWA Y., YARIV A., Fermi energy dependence of linewidth enhancement factor of GaAlAs buried heterostructure lasers, Applied Physics Letters 47(9), 1985, pp. 905–907.
  • [15] COLDREN L.A., CORZINE S.W., Diode Lasers and Photonic Integrated Circuits, Wiley, 1995.
  • [16] TUCKER R., High-speed modulation of semiconductor lasers, Journal of Lightwave Technology 3(6),1985, pp. 1180–1192.
  • [17] MAHER R., KAI SHI, ANANDARAJAH P.M., KASZUBOWSKA A., BARRY L.P., YONGLIN YU, Novel frequency chirp compensation scheme for directly modulated SG DBR tunable lasers, IEEE Photonics Technology Letters 21(5), 2009, pp. 340–342.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0019-0085
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.