Relative intensity noise study in two mode quantum dot laser

• Autorzy: Horri A. , Mirmoeini S. Z. , Faez R.
• Języki publikacji: EN

Abstrakty

EN

In this paper, for the first time, we present a semiclassical noise model for InAs/GaAs quantum dot (QD) laser considering two photon modes, i.e., ground and first excited states lasing. This model is based on the five level rate equations. By using this model, the effect of temperature variations on relative intensity noise (RIN) of QD laser is investigated. We find that the RIN significantly degrades when excited state (ES) lasing emerges at high temperature. Furthermore, we investigate the influence of the quantum dot numbers on the RIN properties.

Słowa kluczowe

EN

relative intensity noise; quantum dot laser; rate equations

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2011
• Tom: Vol. 41, nr 4
• Strony: 961--970
• Opis fizyczny: Bibliogr. 7 poz.

Twórcy

autor

Horri A.

autor

Mirmoeini S. Z.

autor

Faez R.

• Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran

Bibliografia

• [1] SUGAWARA M., Self Assembled InGaAs/GaAs Quantum Dot, 1th Edition, Academic Press, San Diego,1999, pp. 83–97.
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• [3] GENSTY T., ELSÄßER W., Semiclassical model for the relative intensity noise of intersubband quantum cascade lasers, Optics Communications 256(1–3), 2005, pp. 171–183.
• [4] AL-KHURSAN A.H., Intensity noise characteristics in quantum dot lasers: Four-level rate equations analysis, Journal of Luminescence 113(1–2), 2005, pp. 129–136.
• [5] O’DRISCOLL I., HUTCHINGS M., SMOWTON P.M., BLOOD P., Many-body effects in InAs/GaAs quantum dot laser structures, Applied Physics Letters 97(14), 2010, p. 141102.
• [6] PENG-FEI XU, TAO YANG, HAI-MING JI, YU-LIAN CAO, YONG-XIAN GU, YU LIU, WEN-QUAN MA, ZHAN-GUO WANG, Temperature-dependent modulation characteristics for 1.3 μm InAs/GaAs quantum dot lasers, Journal of Applied Physics 107(1), 2010, p. 013102.
• [7] TONG C.Z., YOON S.F., NGO C.Y., LIU C.Y., LOKE W.K., Rate equations for 1.3 μm dots-under-a-well and dots-in-a-well self-assembled InAs–GaAs quantum dot lasers, IEEE Journal of Quantum Electronics 42(11), 2006, pp. 1175–1183.