Evolution of microstructures on silicon induced by femtosecond laser with multiple pulses

• Autorzy: Yuan D. Q. , Zhou M. , Lu D. Q. , Xu J. T.
• Języki publikacji: EN

Abstrakty

EN

The effect of multiple pulses of Ti:sapphire femtosecond laser system on silicon wafer was investigated. Using the pulse energy exceed the threshold of silicon to investigate the evolvement of structures and found that exceed certain fluence no any periodic structure will appearance. For 1.91 J/cm2, the pattern of columnar structure was formed in the central region of irradiation area. In further experiment, using the subthreshold multiple pulse femtosecond laser irradiation of 0.91 J/cm2, the periodic ripple structures and nanohole array were presented in the whole irradiation area due to the incubation effection. Also, we obtained the threshold of nanohole array to be higher than that of the periodic ripple structures.

Słowa kluczowe

EN

femtosecond laser; evolvement; ripples; subthreshold; silicon

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2011
• Tom: Vol. 41, nr 3
• Strony: 727--734
• Opis fizyczny: Bibliogr. 26 poz.

Twórcy

autor

Yuan D. Q.

autor

Zhou M.

autor

Lu D. Q.

autor

Xu J. T.

• Department of Mathematics and Physics, Huai Hai Institute of Technology, Lianyungang, Jiangsu, 222069, China

Bibliografia

• [1] PEDRAZA A.J., FOWLKES J.D., LOWNDES D.H., Self-organized silicon microcolumn arrays generated by pulsed laser irradiation, Applied Physics A 69(7), 1999, pp. S731–S734.
• [2] HOMMES V., MICLEA M., HERGENRÖDER R., Silicon surface morphology study after exposure to tailored femtosecond pulses, Applied Surface Science 252(20), 2006, pp. 7449–7460.
• [3] BÄRSCH N., KÖRBER K., OSTENDORF A., TÖNSHOFF K.H., Ablation and cutting of planar silicon devices using femtosecond laser pulses, Applied Physics A 77(2), 2003, pp. 237–242.
• [4] HER T.H., FINLAY R.J., WU C., MAZUR E., Femtosecond laser-induced formation of spikes on silicon, Applied Physics A 70(4), 2000, pp. 383–385.
• [5] CROUCH C.H., CAREY J.E., WARRENDER J.M., AZIZ M.J., MAZUR E., GÉNIN F.Y., Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon, Applied Physics Letters 84(11), 2004, pp. 1850–1852.
• [6] PETÖ G., KARACS A., PÁSZTI Z., GUCZI L., DIVINYI T., JOÓB A., Surface treatment of screw shaped titanium dental implants by high intensity laser pulses, Applied Surface Science 186(1–4), 2002, pp. 7–13.
• [7] TRTICA M., GAKOVIC B., BATANI D., DESAI T., PANJAN P., RADAK B., Surface modifications of a titanium implant by a picosecond Nd:YAG laser operating at 1064 and 532 nm, Applied Surface Science 253(5), 2006, pp. 2551–2556.
• [8] BONSE J., WROBEL J.M., KRÜGER J., KAUTEK W., Ultrashort-pulse laser ablation of indium phosphide in air, Applied Physics A 72(1), 2001, pp. 89–94.
• [9] BOROWIEC A., HAUGEN H.K., Subwavelength ripple formation on the surfaces of compound semiconductors irradiated with femtosecond laser pulses, Applied Physics Letters 82(25), 2003, pp. 4462–4464.
• [10] KAUTEK W., RUDOLPH P., DAMINELLI G., KRÜGER J., Physico-chemical aspects of femtosecond-pulse--laser-induced surface nanostructures, Applied Physics A 81(1), 2005, pp. 65–70.
• [11] COSTACHE F., KOUTEVA-ARGUIROVA S., REIF J., Sub-damage-threshold femtosecond laser ablation from crystalline Si: Surface nanostructures and phase transformation, Applied Physics A 79(4–6), 2004, pp. 1429–1432.
• [12] GORODETSKY G., KANICKI J., KAZYAKA T., MELCHER R.L., Far UV pulsed laser melting of silicon, Applied Physics Letters 46(6), 1985, pp. 547–549.
• [13] ANTHONY T.R., CLINE H.E., Surface rippling induced by surface-tension gradients during laser surface melting and alloying, Journal of Applied Physics 48(9), 1977, pp. 3888–3894.
• [14] ZHOU GUOSHENG, FAUCHET P.M., SIEGMAN A.E., Growth of spontaneous periodic surface structures on solids during laser illumination, Physical Review B 26(10), 1982, pp. 5366–5381.
• [15] JINCHENG WANG, CHUNLEI GUO, Ultrafast dynamics of femtosecond laser-induced periodic surface pattern formation on metals, Applied Physics Letters 87(25), 2005, p. 251914.
• [16] OZKAN A.M., MALSHE A.P., RAILKAR T.A., BROWN W.D., SHIRK M.D., MOLIAN P.A., Femtosecond laser-induced periodic structure writing on diamond crystals and microclusters, Applied Physics Letters 75(23), 1999, pp. 3716–3718.
• [17] REIF J., COSTACHE F., HENYK M., PANDELOV S.V., Ripples revisited: Non-classical morphology at the bottom of femtosecond laser ablation craters in transparent dielectrics, Applied Surface Science 197–198, 2002, pp. 891–895.
• [18] Le HARZIC R., SCHUCK H., SAUER D., ANHUT T., RIEMANN I., KÖNIG K., Sub-100 nm nanostructuring of silicon by ultrashort laser pulses, Optics Express 13(17), 2005, pp. 6651–6656.
• [19] VENKATAKRISHNAN K., TAN B., STANLEY P., LIM L.E.N., NGOI B.K.A., Femosecond pulsed laser irect writing system, Optical Engineering 41(6), 2002, pp. 1441–1445.
• [20] YUAN D.Q., ZHOU M., CAI L., SHEN J., Micromachining of Au film by femtosecond pulse laser, Spectroscopy and Spectral Analysis 29(5), 2009, pp. 1209–1212.734 D.Q. YUAN et al.
• [21] COYNE E., MAGEE J.P., MANNION P., O’CONNOR G.M., Study of femtosecond laser interaction with wafer-grade silicon, Proceedings of SPIE 4876, 2003, p. 487.
• [22] HER T.H., FINLAY R.J., WU C., DELIWALA S., MAZUR E., Microstructuring of silicon with femtosecond laser pulses, Applied Physics Letters 73(12), 1998, pp. 1673–1675.
• [23] BONSE J., BRZEZINKA K.W., MEIXNER A.J., Modifying single-crystalline silicon by femtosecond laser pulses: An analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy, Applied Surface Science 221(1–4), 2004, pp. 215–230.
• [24] FAUCHET P.M., Gradual surface transitions on semiconductors induced by multiple picosecond laser pulses, Physics Letters A 93(3), 1983, pp. 155–157.
• [25] SMIRL A.L., BOYD I.W., BOGGESS T.F., MOSS S.C., VAN DRIEL H.M., Structural changes produced in silicon by intense 1 μm ps pulses, Journal of Applied Physics 60(3), 1986, pp. 1169–1182.
• [26] JHEE Y.K., BECKER M.F., WALSER R.M., Charge emission and precursor accumulation in the multiple-pulse damage regime of silicon, Journal of the Optical Society of America B 2(10), 1985, pp. 1626–1633.