Electron radiation effects on RuO2-based thick-film temperature sensors

• Autorzy: Mleczko K. , Zawislak Z. , Kolek A. , Danilchenko B. , Voitsihovska O.
• Języki publikacji: EN

Abstrakty

EN

The paper discusses the effects of electron radiation on resistance type Ru-based thick-film temperature sensors. Specimens, both commercial and lab made, were irradiated by the electron beam of the fluence from 5×1015 to 5×1017 e/cm2. R vs. T characteristics were measured from 4 to 300 K before irradiation and after each radiation dose. Measurements show that sensors containing a higher amount of metallic phase (lower resistance) are more immune to radiation. This statement concerns also low frequency noise which was observed to increase less for low-resistance samples. Our conclusion is that the application of Ru-based temperature sensors in the radiation environment is limited to the low temperature region - below 20…25 K.

Słowa kluczowe

EN

RuO2 thick-film resistors; temperature sensors; radiation effects

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2011
• Tom: Vol. 41, nr 2
• Strony: 455--462
• Opis fizyczny: Bibliogr. 8 poz.

Twórcy

autor

Mleczko K.

autor

Zawislak Z.

autor

Kolek A.

autor

Danilchenko B.

autor

Voitsihovska O.

• Department of Electronics Fundamentals, Rzeszów University of Technology, W. Pola 2, 35-959 Rzeszów, Poland

Bibliografia

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