Analysis of chemical shifts in Auger electron spectra versus sputtering time from passivated surfaces

• Autorzy: Domanowska A. , Adamowicz B. , Bidziński P. , Klimasek A. , Szewczenko J. , Gutt T. , Przewłocki H.
• Języki publikacji: EN

Abstrakty

EN

Chemical shifts in Auger electron spectra versus Ar+ ion sputtering time were analysed for various passivated interfaces, including SiO2(100 nm)/Si, SiO2(40 nm)/4H-SiC structures and native oxide/austenitic stainless steel 316LVM. On this basis, in-depth profiles of chemical composition were determined and the thickness of passivation nanofilms was estimated. Quantitative numerical analysis was performed by means of a developed computer procedure for both the AES spectrum background subtraction and peak decomposition with pseudo-Voigt functions using evolutionary algorithms.

Słowa kluczowe

EN

Auger electron spectroscopy (AES); interfaces; passivation; evolutionary algorithms

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2011
• Tom: Vol. 41, nr 2
• Strony: 441--447
• Opis fizyczny: Bibliogr. 8 poz.

Twórcy

autor

Domanowska A.

autor

Adamowicz B.

autor

Bidziński P.

autor

Klimasek A.

autor

Szewczenko J.

autor

Gutt T.

autor

Przewłocki H.

• Silesian University of Technology, Institute of Physics, Department of Surface Physics and Nanostructures, Bolesława Krzywoustego 2, 44-100 Gliwice, Poland

Bibliografia

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• [5] KE R., HAASCH R.T., FINNEGAN N., DOTTL L.E., ALKIRE R.C., FARRELL H.H., Chemical and matrix effects on sensitivity factors in electron spectroscopies. I. C and Si containing materials, Journal of Vacuum Science and Technology A 14(1), 1996, pp. 80–88.
• [6] VAN RIESSEN G.A., THURGATE S.M., RAMAKER D.E., Auger-photoelectron coincidence spectroscopy of SiO2 , Journal of Electron Spectroscopy and Related Phenomena 161(1–3), 2007, pp. 150–159.
• [7] CHAO S.S., TYLER J.E., TAKAGI Y., PAI P.G., LUCOVSKY G., LIN S.Y., WONG C.K., MANTINI M.J., A study of chemical bonding in suboxides of silicon using Auger electron spectroscopy, Journal of Vacuum Science and Technology A 4(3), 1986, pp. 1574–1579.
• [8] ÓLAFSSON H.Ö., SVEINBJÖRNSSON E.Ö., RUDENKO T.E., TYAGULSKI I.P., OSIYUK I.N., LYSENKO V.S., Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally--stimulated current technique, Applied Physics Letters 79(24), 2001, pp. 4034–4036.