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We report on the performance of planar silicon diodes, operating at a temperature range above 300 K and emitting infrared radiation. The results present a theoretical analysis and experimental verification of an optimization aimed at a maximal difference between emissivity of this structure for cases with and without forward bias applied to p-n junction. Several advantages of the structures were shown: wide emission spectrum (3-12 ?m), short rise-fall time (300 ?s), high operating temperature (? 400 K). Spatial distribution of photonic radiation emitted by a silicon structure obtained by a thermovision camera is compared with computer simulation distribution of carrier concentration. These planar sources can be used as easily controlled sources of infrared radiation in a wide spectral range, image simulators, e.g., dynamic scene simulation devices with frame frequencies well above 200 Hz and for measurements of thermovision camera dynamic parameters.
Słowa kluczowe
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Tom
Strony
333--339
Opis fizyczny
Bibliogr. 9 poz.
Twórcy
autor
autor
autor
autor
autor
- Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
Bibliografia
- [1] WILLIAMS O.M., REEVES G.K., ONG G.T., Performance characteristics of thin film resistor arrays for infrared projector applications, Proceedings of SPIE 1687, 1992, pp. 71–81.
- [2] JOHNSON R.B., CHUNG R., GAITAN M., BERNING D., Flat-panel thermal infrared scene generator, Proceedings of SPIE 2269, 1994, pp. 338–347.
- [3] COLE B.E., HIGASHI R.E., RIDLEY J.A., HOLMEN J., ARENDT J.W., MALONE C.L., STOCKBRIDGE R.G., GOLDSMITH G.C., JONES L.E., 512×512 WISP (wideband infrared scene projector) arrays, Proceedings of SPIE 2741, 1996, pp. 81–93.
- [4] MALYUTENKO V., MELNIK A., MALYUTENKO O., High temperature (T > 300 K) light emitting diodes for 8–12 μm spectral range, Infrared Physics and Technology 41(6), 2000, pp. 373–378.
- [5] CHEN M.J., JEN J.L., LI J.Y., CHANG J.F., TSAI S.C., TSAI C.S., Stimulated emission in a nanostructured silicon pn junction diode using current injection, Applied Physics Letters 84(12), 2004, pp. 2163–2165.
- [6] MALYUTENKO V.K., BOLGOV S.S., MALYUTENKO O.YU., Above-room-temperature 3–12 μm Si emitting arrays, Applied Physics Letters 88(21), 2006, p. 211113.
- [7] LIPTUGA A., PIOTROWSKI T., SIKORSKI S., Investigation of small-signal operation of the infrared germanium injection modulator, Infrared Physics and Technology 38(5), 1997, pp. 273–279.
- [8] MALYUTENKO V.K., Thermal emission in semiconductors: Investigation and application, Infrared Physics 32, 1991, pp. 291–302.
- [9] PIOTROWSKI T., MALYUTENKO V.K., WĘGRZECKI M., CZERWINSKI A., POLAKOWSKI H., TYKHONOV A.M., Optimization of parameters for silicon planar source of modulated infrared radiation, Materials Science and Engineering B 176(4), 2011, pp. 363–367.
Typ dokumentu
Bibliografia
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bwmeta1.element.baztech-article-BPW7-0017-0007