Planar silicon structure in application to the modulation of infrared radiation

• Autorzy: Piotrowski T. , Tomaszewski D. , Węgrzecki M. , Malyutenko V. K. , Tykhonov A. M.
• Języki publikacji: EN

Abstrakty

EN

We report on the performance of planar silicon diodes, operating at a temperature range above 300 K and emitting infrared radiation. The results present a theoretical analysis and experimental verification of an optimization aimed at a maximal difference between emissivity of this structure for cases with and without forward bias applied to p-n junction. Several advantages of the structures were shown: wide emission spectrum (3-12 ?m), short rise-fall time (300 ?s), high operating temperature (? 400 K). Spatial distribution of photonic radiation emitted by a silicon structure obtained by a thermovision camera is compared with computer simulation distribution of carrier concentration. These planar sources can be used as easily controlled sources of infrared radiation in a wide spectral range, image simulators, e.g., dynamic scene simulation devices with frame frequencies well above 200 Hz and for measurements of thermovision camera dynamic parameters.

Słowa kluczowe

EN

infrared radiation; emission; free carrier injection

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2011
• Tom: Vol. 41, nr 2
• Strony: 333--339
• Opis fizyczny: Bibliogr. 9 poz.

Twórcy

autor

Piotrowski T.

autor

Tomaszewski D.

autor

Węgrzecki M.

autor

Malyutenko V. K.

autor

Tykhonov A. M.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

Bibliografia

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