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Application of AFM technique for creation of patterns in nanoscale

Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The lithography is a main technology process which determines the properties of semiconductor devices. The resolution of optical lithography is insufficient for creation of submicrometer patterns, like, e.g., gate electrode in HEMT transistors. Thus, a novel technique that uses AFM technique and common photolithography was proposed. In the paper, the results of nanoscratching lithography were presented and discussed. Also the transmission and root mean square of thin metal films measurements were summarized.
Czasopismo
Rocznik
Strony
307--314
Opis fizyczny
Bibliogr. 13 poz.
Twórcy
autor
autor
  • Faculty of Microsystem Electronic and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
Bibliografia
  • [1] VIEU C., CARCENAC F., PEPIN A., CHEN Y., MEJIAS M., LEBIB A., MANIN-FERLAZZO L., COURAUD L., LAUNOIS H., Electron beam lithography: Resolution limits and applications, Applied Surface Science 164(1–4), 2000, pp. 111–117.
  • [2] ADESIDA I., KRATSCHMER E., WOLF E.D., MURAY A., ISSACSON M., Ion beam lithography at nanometer dimensions, Journal of Vacuum Science and Technology B 3(1), 1985, pp. 45–49.
  • [3] FRITZE M., TYRRELL B.M., ASTOLFI D.K., LAMBERT R.D., YOST D.-R.W., FORTE A.R., CANN S.G., WHEELER B.D., Subwavelength optical lithography with phase-shift photomasks, Lincoln Laboratory Journal 14(2), 2003, pp. 237–250.
  • [4] XIE X.N., CHUNG H.J., SOW C.H., WEE A.T.S., Nanoscale materials patterning and engineering by atomic force microscopy nanolithography, Materials Science and Engineering R: Reports 54(1–2), 2006, pp. 1–48.
  • [5] YAN Y.D., SUN T., DONG S., Study on effects of tip geometry on AFM nanoscratching tests, Wear 262(3–4), 2007, pp. 477–483.
  • [6] VERSEN M., KLEHN B., KUNZE U., REUTER D., WIECK A.D., Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope, Ultramicroscopy 82(1–4), 2000, pp. 159–163.
  • [7] WU TANG, XIAOLONG WENG, LONGJIANG DENG, KEWEI XU, JIAN LU, Nano-scratch experiments of Au/NiCr multi-layer films for microwave integrated circuits, Surface and Coatings Technology 201(9–11), 2007, pp. 5664–5666.314 M. RAMIĄCZEK-KRASOWSKA et al.
  • [8] YU-JU CHEN, JU-HUNG HSU, HEH-NAN LIN, Fabrication of metal nanowires by atomic force microscopy nanoscratching and lift-off process, Nanotechnology 16(8), 2005, pp. 1112–1115.
  • [9] WENDEL M., IRMER B., CORTES J., KAISER R., LORENZ H., KOTTHAUS J.P., LORKE A., WILLIAMS E., Nanolithography with an atomic force microscope, Superlattices and Microstructures 20(3), 1996, pp. 349–356.
  • [10] http://www.veecoprobes.com/p-3388-rtesp.aspx.
  • [11] http://nanoandmore.com/AFM-Probe-AR5-NCHR.html.
  • [12] SLEPICKA P., SVORCIK V., SLOUF M., RYBKA V., SPIRKOVA M., Characterization of metal nanolayers sputtered on poly(ethyleneterephtalate), Optoelectronics and Advanced Materials 2(3), 2008, pp. 153–160.
  • [13] IRMER B., BLICK R.H., SIMMEL F., GODEL W., LORENZ H., KOTTHAUS J.P., Josephson junctions defined by a nanoplough, Applied Physics Letters 73(14), 1998, pp. 2051–2053.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0017-0004
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