Electrical and photoelectric characterization of the MOS structures on 3C-SiC substrate

• Autorzy: Piskorski K. , Przewłocki H. M. , Esteve R. , Bakowski M.
• Języki publikacji: EN

Abstrakty

EN

In this work results are presented of the electrical and photoelectric measurements of MOS capacitors, consisting of an Al gate of thickness 25 nm, SiO2 insulator of thickness 60 nm, and n-doped 3C-SiC. Many different measurement techniques are employed in order to completely define all parameters of the band diagram of the MOS structure, which is the main goal of these investigations.

Słowa kluczowe

EN

silicon carbide; SiC; MOS structure; band diagram

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2011
• Tom: Vol. 41, nr 2
• Strony: 295--305
• Opis fizyczny: Bibliogr. 17 poz.

Twórcy

autor

Piskorski K.

autor

Przewłocki H. M.

autor

Esteve R.

autor

Bakowski M.

• Institute of Electron Technology, Department of Characterization of Nanoelectronic Structures, al. Lotników 32/46, 02-668 Warsaw, Poland

Bibliografia

• [1] SHUR M., SiC Parameters Handbook, http://www.ioffe.ru/SVA/NSM/Semicond/SiC.
• [2] PENSL G., BASSLER M., CIOBANU F., AFANAS’EV V.V., YANO H., KIMOTO T., MATSUNAMI H., Traps at the SiC/SiO2 interface, MRS Proceedings 640(3), 2000, p. H3.2.
• [3] BAKOWSKI M., SCHÖNER A., ERICSSON P., STRÖMBERG H., NAGASAWA H., ABE M., Development of 3C–SiC MOSFETs, Journal of Telecommunications and Information Technology, No. 2, 2007, pp. 49–56.
• [4] NAGASAWA H., ABE M., YAGI K., KAWAHARA T., HATTA N., Fabrication of high performance 3C–SiC vertical MOSFETs by reducing planar defects, [In] Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, [Eds.] Friedrichs P., Kimoto T., Pensl G., Wiley, New York, 2010.
• [5] PORĘBSKI S., MACHALICA P., ZAJĄC J., BOROWICZ L., KUDLA A., PRZEWŁOCKI H.M., Universal system for photoelectric characterisation of semiconductor structures, IEE Proceedings Science, Measurement and Technology 150(4), 2003, pp. 148–152.
• [6] POWELL R.J., Photoinjection into SiO2 : Use of optical interference to determine electron and hole contributions, Journal of Applied Physics 40(13), 1969, pp. 5093–5101.
• [7] NICOLLIAN E.H., BREWS J.R., MOS Physics and Technology, J. Wiley and Sons, New York, 1982.
• [8] HYNECEK J., Graphical method for determining the flat band voltage for silicon on sapphire, Solid-State Electronics 18(2), 1975, pp. 119–120.
• [9] YUN B.H., Direct measurement of flat-band voltage in MOS by infrared excitation, Applied Physics Letters 21(5), 1972, pp. 194–195.
• [10] JAKUBOWSKI A., KRAWCZYK S., Photoelectric method of the MIS flat-band voltage determination, Electron Technology 11(1–2), 1978, pp. 23–35.
• [11] HEAVENS O.S., Optical Properties of Thin Solid Films, Academic Press, New York, 1955.
• [12] PALIK E.D. [Ed.], Handbook of Optical Constants of Solids, Academic Press Handbook Series, Orlando, 1985.
• [13] AFANAS’EV V.V., Internal Photoemission Spectroscopy: Principles and Applications, Elsevier,
• [14] FOWLER R.H., The analysis of photoelectric sensitivity curves for clean metals at various temperatures, Physical Review 38(1), 1931, pp. 45–56.
• [15] PRZEWŁOCKI H.M., Theory and applications of internal photoemission in the MOS system at low electric fields, Solid-State Electronics 45(8), 2001, pp. 1241–1250.
• [16] AFANAS’EV V.V., BASSLER M., PENSL G., SCHULZ M.J., STEIN VON KAMIENSKI E., Band offsets and electronic structure of SiC/SiO2 interfaces, Journal of Applied Physics 79(6), 1996, pp. 3108–3114.
• [17] AFANAS’EV V.V., BASSLER M., PENSL G., SCHULZ M., Intrinsic SiC/SiO2 interface states, Physica Status Solidi (a) 162(1), 1997, pp. 321–337.