Characterization of AIIIBV epitaxial layers by scanning spreading resistance microscopy

• Autorzy: Szyszka A. , Ściana B. , Radziewicz D. , Macherzyński W. , Paszkiewicz B. , Tłaczała M.
• Języki publikacji: EN

Abstrakty

EN

One of the electrical characterization techniques of semiconductor structures with nanometer spatial resolution is scanning spreading resistance microscopy (SSRM). The applicability of SSRM technique for characterization of GaAs structures with n-type doping fabricated by metalorganic vapour phase epitaxy (MOVPE) was examined. The influence of scaling effect on the nanometer size AFM tip-semiconductor electrical characteristics was described. The results of characterization of device structure of magnetic field sensitive field effect transistor were presented.

Słowa kluczowe

EN

scanning spreading resistance microscopy (SSRM); spreading resistance; GaAs; atomic force microscopy (AFM)

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2011
• Tom: Vol. 41, nr 2
• Strony: 281--288
• Opis fizyczny: Bibliogr. 7 poz.

Twórcy

autor

Szyszka A.

autor

Ściana B.

autor

Radziewicz D.

autor

Macherzyński W.

autor

Paszkiewicz B.

autor

Tłaczała M.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

• [1] EYBEN P., VANHAEREN D., JANSSENS T., HANTSCHEL T., VANDERVORST W., ADACHI K., ISHIMARU K., Evaluation of the junction delineation accuracy and reproducibility with the SSRM technique, Microelectronic Engineering 84(3), 2007, pp. 437–440.
• [2] CLARYSSE T., DE WOLF P., BENDER H., VANDERVORST W., Recent insights into the physical modeling of the spreading resistance point contact, Journal of Vacuum Science and Technology B 14(1), 1996, pp. 358–368.
• [3] LU R.P., KAVANAGH K.L., DIXON-WARREN ST.J., SPRINGTHORPE A.J., STREATER R., CALDER I., Scanning spreading resistance microscopy current transport studies on doped III–V semiconductors, Journal of Vacuum Science and Technology B 20(4), 2002, pp. 1682–1689.
• [4] EYBEN P., JANSSENS T., VANDERVORST W., Scanning spreading resistance microscopy (SSRM) 2d carrier profiling for ultra-shallow junction characterization in deep-submicron technologies, Materials Science and Engineering B 124–125, 2005, pp. 45–53.
• [5] SZYSZKA A., LIPOWICZ H., ŚCIANA B., PASZKIEWICZ B., PASZKIEWICZ R., TŁACZAŁA M., Evaluation of SSRM for electrical charaterisation of epitaxial GaAs/AlGaAs layers, Presentation at Conference Nano Measure 2010, June 3–4, Kraków, Poland.
• [6] SMIT G.D.J., ROGGE S., KLAPWIJK T.M., Scaling of nano-Schottky-diodes, Applied Physics Letters 81(20) 2002, pp. 3852–3854.
• [7] BORATYŃSKI B., KORDALSKI W., ŚCIANA B., PANEK M., ZBOROWSKA-LINDERT I., A new drain insulation design in GaAs SD-MAGFET, Materials Science-Poland 26(1), 2008, pp. 27–32.