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An ultra high vacuum atomic force microscope operating in a noncontact mode has been employed to investigate in situ atomic layer deposition (ALD) of HfO2. Tetrakis-di-methyl-amido-Hf and H2O were used as precursors and the deposition process was performed on Si(001)/SiO2 substrate maintained at 230 °C. The relation between the film growth and the root mean square surface roughness was studied after each ALD cycle. The histograms of the initial stages of the ALD process have been compared in terms of the surface height data as a way of characterizing the growth process. Parameter values corresponding to HfO2 layer thickness and coverage were calculated. A detailed analysis of the surface height histograms allowed one to construct a simplified growth model and confirm the completion of the first HfO2 layer after four ALD cycles.
Wydawca
Czasopismo
Rocznik
Tom
Strony
731--740
Opis fizyczny
Bibliogr. 34 poz.
Twórcy
autor
autor
autor
- Brandenburg University of Technology Department of Applied Physics and Sensors Konrad-Wachsmann-Allee 17 03046 Cottbus Germany
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0014-0060