A study on temperature characteristics of green silicon photodetector

• Autorzy: Fu X. , Yao S. , Tao G. , De M.
• Języki publikacji: EN

Abstrakty

EN

Green silicon photodetector is successfully developed on the substrate of n-type single-crystal (100) silicon. To improve its performance, the detector is optimized by optimizing the p-n junction depth xj and the thickness of antireflection layer to reduce dark current, shorten response time and increase sensitivity. The spectrum response SNR can be over 104 within the wavelength range of 500-600 nm and the peak of spectral responsivity is 0.48 A/W at about 520 nm. The temperature characteristics of the dark current at reverse bias and photocurrent at zero bias are emphatically investigated. Firstly, the temperature behavior of dark current at 10 V reverse bias voltage and temperature range of 253-323 K is studied. Results show that dark current is dominated by generation-recombination current Igr the temperature range of 253-283 K and it is dominated by traps tunneling current Itt at the temperature range of 283-323 K. Secondly, the temperature behavior of photocurrent at zero bias and temperature range of 213-353 K is discussed. Results show that photocurrent increases as temperature increases below room temperature and almost holds the line over room temperature. Consequently, photodetector fulfils quality requirements.

Słowa kluczowe

EN

green silicon photodetector; temperature characteristics; dark current; generation-recombination current; traps tunneling current

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2010
• Tom: Vol. 40, nr 4
• Strony: 935--941
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Fu X.

autor

Yao S.

autor

Tao G.

autor

De M.

• School of Information and Communication Engineering, Tianjin Polytechnic University, Tianjin 300160, P.R. China

Bibliografia

• [1] LIU ENKE et al., Semiconductor Physics, 7th Edition, Electronic Industry Publishing House, Beijing, 2003, pp. 162–192 (in Chinese).
• [2] ZHANG SHENGCAI et al., The analysis for reliability and life of the photo-sensitive diodes, Journal of Optoelectronics – Laser 14(5), 2003, pp. 466–469 (in Chinese).
• [3] XIANSONG FU, SUYING YAO, JIANGTAO XU, YAO LU, YUNGUANG ZHENG, Study on high signal-to-noise ratio (SNR) silicon p-n junction photodetector, Optica Applicata 36(2–3), 2006, pp. 421–428.
• [4] HAO GUO-QIANG et al., Temperature behavior of In0.53Ga0.47 As PIN photodetectors, Journal of Functional Materials and Devices 11(2), 2005, pp. 192–196 (in Chinese).
• [5] OBREJA V.V.N., On the leakage current of present-day manufactured semiconductor junctions, Solid-State Electronics 44(1), 2000, pp. 49–57.
• [6] YAN YANG et al., Design of high performance Si photodetector and analyses of temperature characteristic, Journal of Optoelectronics – Laser 18(1), 2007, pp. 46–49 (in Chinese).