Application of microscope thermography in testing temperature distribution in a semiconductor laser

• Autorzy: Rybinski J. , Bednarek M. , Wisniewski P. , Swietlik T.
• Języki publikacji: EN

Abstrakty

EN

Microscope thermography with the use of thermovision camera with spatial resolution 8 žm was applied in testing temperature distribution in semiconductor lasers produced on the basis of nitrides. The conducted tests have shown that the microscope thermography has a potential in characterizing microelectronic devices like semiconductor laser diodes and can be considered as a complementary tool in establishing thermal characteristics of these devices.

Słowa kluczowe

EN

microscope thermography; blue lasers; semiconductor lasers

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2010
• Tom: Vol. 40, nr 3
• Strony: 609--614
• Opis fizyczny: Bibliogr. 5 poz.

Twórcy

autor

Rybinski J.

autor

Bednarek M.

autor

Wisniewski P.

autor

Swietlik T.

• Main School of Fire Service, ul. Słowackiego 52/54, 01-629 Warsaw, Poland

Bibliografia

• [1] COLDREN A., CORZINE S.W., Diode Lasers and Photonic Integrated Circuits, Wiley, New York, 1995.
• [2] DIEHL R. [Ed.], High-Power Lasers, Springer-Verlag, Berlin, Heidelberg, 2000.
• [3] MORKOÇ H., Nitride Semiconductors and Devices, Springer-Verlag, Berlin, Heidelberg, 1999.
• [4] PERLIN P., LESZCZYŃSKI M., PRYSTAWKO P., BOĆKOWSKI M., GRZEGORY I., SKIERBISZEWSKI C., SUSKI T.,Laser diodes grown on gallium nitride substrates, [In] III-Nitride Devices and NanoEngineering,[Ed.] Zhe Chuan Feng, Imperial College Press, London, 2008, pp. 223–252.
• [5] KOZLOWSKA A., Infrared imaging of semiconductor lasers, Semiconductor Science and Technology 22(8), 2007, p. R27 (and references therein).