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Investigation and analysis of time response in Geiger mode avalanche photodiode

Wybrane pełne teksty z tego czasopisma
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Języki publikacji
EN
Abstrakty
EN
Statistical properties of the impulse response of avalanche photodiode (APDs) are determined. The model is based on recurrence equations. These equations are solved numerically to calculate the mean current impulse response and standard deviation as a function of time. In this paper, we investigate the effects of parameters such as ionization coefficient-multiplication thickness product (?w), dead space, excess noise factor, mole fraction, temperature on the mean current impulse response of APD in the Geiger mode.
Słowa kluczowe
Czasopismo
Rocznik
Strony
471--479
Opis fizyczny
Bibliogr. 16 poz.
Twórcy
autor
autor
autor
  • Department of Electrical Engineering Islamic Azad University, Science and Research Branch, Tehran, Iran
Bibliografia
  • [1] CHEE HING TAN, DAVID J.P.R., PLIMMER S.A., REES G.J., TOZER R.C., GREY R., Low multiplication noise thin Al0.6Ga0.4 As avalanche photodiodes, IEEE Transactions on Electron Devices 48(7), 2001, pp. 1310–1317.
  • [2] CAMPBELL J.C., Recent advances in telecommunications avalanche photodiodes, Journal of Lightwave Technology 25(1), 2007, pp. 109–121.
  • [3] LOUIS T.A., RIPAMONTI G., LACAITA A., Photoluminescence lifetime microscope spectrometer basedon time-correlated single-photon counting with an avalanche diode detector, Review of Scientific Instruments 61(1), 1990, pp. 11–22.
  • [4] CUMMINS H.Z., PIKE E.R., Photon Correlation Spectroscopy and Velocimetry, Plenum, New York, 1977.
  • [5] VEILLET C. [Ed.], 7th International Workshop on Laser Ranging Instrumentation, OCA/CERGA, Matera, Italy, October 2–8, 1989.
  • [6] BETHEA C.G., LEVINE B.F., COVA S., RIPAMONTI G., High-resolution and high-sensitivity optical--time-domain reflectometer, Optics Letters 13(3), 1988, pp. 233–235.
  • [7] LI-QIANG LI, DAVIS L.M., Single photon avalanche diodes for single molecule detection, Review of Scientific Instruments 64(6), 1993, pp. 1524–1529.
  • [8] SPINELLI A., DAVIS L.M., DAUTET H., Single photon avalanche diode for high count rate applications,[In] Proc. 1995 OSA Ann. Mtg., Portland, OR, September 10–15, 1995.
  • [9] GROVES C., TAN C.H., DAVID J.P.R., REES G.J., HAYAT M.M., Exponential time response in analogue and Geiger mode avalanche photodiodes, IEEE Transactions on Electron Devices 52(7), 2005, pp. 1527–1534.
  • [10] MAZZILLO M., PIAZZA A., CONDORELLI G., SANFILIPPO D., FALLICA G., BILLOTTA S., BELLUSO M., BONANNO G., COSENTINO L., PAPPALARDO A., FINOCCHIARO P., Quantum detection efficiency in Geiger mode avalanche photodiodes, IEEE Transactions on Nuclear Science 55(6), 2008, pp. 3620–3625.
  • [11] MOLL J.L., MEYER N., Secondary multiplication in silicon, Solid-State Electronics 3(2), 1961, pp. 155–158.
  • [12] SALEH M.A., HAYAT M.M., SALEH B.E.A., TEICH M.C., Dead-space based theory correctly predicts excess noise factor for thin GaAs and AlGaAs avalanche photodiodes, IEEE Transactions on Electron Devices 47(3), 2000, pp. 625–633.
  • [13] PLIMMER S.A., DAVID J.P.R., GREY R., REES G.J., Avalanche multiplication in AlxGa1–x As (x = 0 to 0.60), IEEE Transactions on Electron Devices 47(5), 2000, pp. 1089–1097.
  • [14] GROVES C., CHIA C.K., TOZER R.C., DAVID J.P.R., REES G.J., Avalanche noise characteristics of single AlxGa1–x As (0.3 < x < 0.6)–GaAs heterojunction APDs, IEEE Journal of Quantum Electronics 41(1), 2005, pp. 70–75.
  • [15] TAN C.H., HAMBLETON P.J., DAVID J.P.R., TOZER R.C., REES G.J., Calculation of APD impulse response using a space- and time-dependent ionization probability distribution function, Journal of Lightwave Technology 21(1), 2003, pp. 155–159.
  • [16] HAYAT M.M., SALEH B.E.A., Statistical properties of the impulse response function of double-carrier multiplication avalanche photodiodes including the effect of dead space, Journal of Lightwave Technology 10(10), 1992, pp. 1415–1425.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0012-0167
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