Doped cap layer effect on impurity-free vacancy enhanced disordering in InGaAs/InP quantum well structures

• Autorzy: An Y. P. , Wang Y. D. , Cao F.
• Języki publikacji: EN

Abstrakty

EN

Strong influence on impurity-free vacancy enhanced disordering by the cap layer doping is studied on the InGaAs/InP quantum well structure with a doped cap layer. The observations are consistent with intermixing experiments using both Si3N4 and SiO2 as encapsulation dielectric layers. The largest intermixing occurs in the n-InP capped samples and is explained by the enhancement in out-diffusion of positive ions by the built-in electric field.

Słowa kluczowe

EN

point defects; interdiffusion; built-in electric field

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2010
• Tom: Vol. 40, nr 1
• Strony: 249--254
• Opis fizyczny: Bibliogr. 15 poz.

Twórcy

autor

An Y. P.

autor

Wang Y. D.

autor

Cao F.

• State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

Bibliografia

• [1] TENG J.H., DONG J.R., CHUA S.J., LAI M.Y., FOO B.C., THOMPSON D.A., ROBINSON B.J., LEE A.S.W., HAZELL J., SPROULE I., Controlled group V intermixing in InGaAsP quantum well structures and its application to the fabrication of two section tunable lasers, Journal of Applied Physics 92(8), 2002, pp. 4330–4335.
• [2] ZHAO J., FENG Z.C., WANG Y.C., DENG J.C., XU G., Luminescent characteristics of InGaAsP/InP multiple quantum well structures by impurity-free vacancy disordering, Surface and Coatings Technology 200(10), 2006, pp. 3245–3249.
• [3] ONG T.K., CHAN Y.C., LAM Y.L., OOI B.S., Wavelength tuning in InGaAs/InGaAsP quantum well lasers using pulsed-photoabsorption-induced disordering, Applied Physics Letters 78(18), 2001, pp. 2637–2639.
• [4] TANG J.S., YANG S.J., BHATRANAND A., Monolithic integration of semiconductor optical amplifier and photodiode through quantum well intermixing, [In] Conference on Lasers and Electro-Optics/ Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD), Optical Society of America, 2007, paper JThD105.
• [5] LIM H.S., AIMEZ V., OOI B.S., BEAUVAIS J., BEERENS J., A novel fabrication technique for multiple-wavelength photonic-integrated devices in InGaAs-InGaAsP laser heterostructures, IEEE Photonics Technology Letters 14(5), 2002, pp. 594–596.
• [6] PIVA P.G., MITCHELL I.V., HUAJIE CHEN, FEENSTRA R.M., AERS G.C., POOLE P.J., CHARBONNEAU S., InGaAs/InP quantum well intermixing studied by high-resolution x-ray diffraction and grazing incidence x-ray analysis, Journal of Applied Physics 97(9), 2005, p. 093519.
• [7] DJIE H.S., MEI T., AROKIARAJ J., SOOKDHIS C., YU S.F., ANG L.K., TANG X.H., Experimental and theoretical analysis of argon plasma-enhanced quantum-well intermixing, IEEE Journal of Quantum Electronics 40(2), 2004, pp. 166–174.
• [8] XU C.D., MEI T., CHIN M.K., DONG J.R., CHUA S.J., Built-in electric field enhancement/retardation on intermixing, Applied Physics Letters 91(18), 2007, p. 181111.
• [9] OOI B.S., MCILVANEY K., STREET M.W., HELMY A.S., AYLING S.G., BRYCE A.C., MARSH J.H., ROBERTS J.S., Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion, IEEE Journal of Quantum Electronics 33(10), 1997, pp. 1784–1793.
• [10] SANG KEE SI, DEOK HO YEO, HYUNG HUN YOON, SUNG JUNE KIM, Area slectivity of InGaAsP-InP multiquantum-well intermixing by impurity-free vacancy diffusion, IEEE Journal of Selected Topics in Quantum Electronics 4(4), 1998, pp. 619–623.
• [11] ZHAO J., FENG Z.C., YANG Y.C., CHEN J.L., LIU R., XU G., Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing, Thin Solid Films 498(1–2), 2006, pp. 179–182.
• [12] XU C.D., MEI T., DONG J.R., Determination of diffusion lengths for intermixed quaternary quantum well with polarized edge-emitting photoluminescence, Applied Physics Letters 90(19),2007, p. 191111
• [13] COLBOURNE P.D., CASSIDY D.T., Imaging of stresses in GaAs diode lasers using polarization--resolved photoluminescence, IEEE Journal of Quantum Electronics 29(1), 1993, pp. 62–68.
• [14] LAKSHMI B., CASSIDY D.T., ROBINSON B.J., Quantum-well strain and thickness characterization by degree of polarization, Journal of Applied Physics 79(10), 1996, pp. 7640–7645.
• [15] XU C.D., MEI T., IEEE Journal of Quantum Electronics (to be published).