Ta-doped In2O3 transparent conductive films with high transmittance and low resistance

• Autorzy: Wang B. , Hu L. M. , Liu F. M. , Qin L. , Liu Y. , Wang L. J.
• Języki publikacji: EN

Abstrakty

EN

Ta-doped In2O3 transparent conductive oxide (TCO) thin films are deposited on glass substrates by radio-frequency (RF) sputtering at room-temperature. The influence of sputtering power on the structural, morphologic, electrical, and optical properties of the films is investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic structure and preferentially oriented in the (222) crystallographic direction. The minimum resistivity of 2.8×10-4 ?cm is obtained from the film deposited at the sputtering power of 170 W. The average optical transmittance of the films is over 90%.

Słowa kluczowe

EN

sputtering; In2O3; transparent conductive oxide; thin films

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2010
• Tom: Vol. 40, nr 1
• Strony: 25--31
• Opis fizyczny: Bibliogr. 22 poz.

Twórcy

autor

Wang B.

autor

Hu L. M.

autor

Liu F. M.

autor

Qin L.

autor

Liu Y.

autor

Wang L. J.

• Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, P.R. China

Bibliografia

• [1]JUN NI, LIAN WANG, YU YANG, HE YAN, SHU JIN, MARKS T.J., IRELAND J.R., KANNEWURF C.R., Charge transport and optical properties of MOCVD-derived highly transparent and conductive Mg- and Sn-doped In2O3 thin films, Inorganic Chemistry 44(17), 2005, pp. 6071–6076.
• [2]WANG Y., ANDERSON C., Formation of thin transparent conductive composite films from aqueous colloidal dispersions, Macromolecules 32(19), 1999, pp. 6172–6179.
• [3]KUPFER H., KLEINHEMPEL R., GRAFFEL B., WELZEL TH., DUNGER TH., RICHTER F., GNEHR W.-M., KOPTE T., AC powered reactive magnetron deposition of indium tin oxide (ITO) films from a metallic target, Surface and Coatings Technology 201(7), 2006, pp. 3964–3969.
• [4]KIM H., HORWITZ J.S., KUSHTO G.P., QADRI S.B., KAFAFI Z.H., CHRISEY D.B., Transparent conducting Zr-doped In2O3 thin films for organic light-emitting diodes, Applied Physics Letters 78(8), 2001, pp. 1050–1052.
• [5]GÓMEZ-POZOS H., MALDONADO A., DE LA OLVERA M., Effect of the [Al/Zn] ratio in the starting solution and deposition temperature on the physical properties of sprayed ZnO:Al thin films, Materials Letters 61(7), 2007, pp. 1460–1464.
• [6]QUAN-BAO MA, ZHI-ZHEN YE, HAI-PING HE, LI-PING ZHU, JING-RUI WANG, BING-HUI ZHAO, Influence of Ar/O2 ratio on the properties of transparent conductive ZnO: Ga films prepared by DC reactive magnetron sputtering, Materials Letters 61(11–12), 2007, pp. 2460–2463.
• [7]MAKINO T., SEGAWA Y., YOSHIDA S., TSUKAZAKI A., OHTOMO A., KAWASAKI M., Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga, Applied Physics Letters 85(5), 2004, pp. 759–761.
• [8]CHANG S.Y., HSIAO Y.C., HUANG Y.C., Preparation and mechanical properties of aluminum-doped zinc oxide transparent conducting films, Surface and Coatings Technology 202(22–23), 2008, pp. 5416–5420.
• [9]KIM D.H., PARK M.R., LEE G.H., Preparation of high quality ITO films on a plastic substrate using RF magnetron sputtering, Surface and Coatings Technology 201(3–4), 2006, pp. 927–931.
• [10]ABE Y., NAKAYAMA T., Transparent conductive film having sandwich structure of gallium––indium-oxide/silver/gallium–indium-oxide, Materials Letters 61(18), 2007, pp. 3897–3900.
• [11]CHEONG K.Y., MUTI N., RAMANAN S.R., Electrical and optical studies of ZnO:Ga thin films fabricated via the sol–gel technique, Thin Solid Films 410(1–2), 2002, pp. 142–146.
• [12]ASSUNÇÃO V., FORTUNATO E., MARQUES A., ÁGUAS H., FERREIRA I., COSTA M.E.V., MARTINS R., Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature, Thin Solid Films 427(1–2), 2003, pp. 401–405.
• [13]HENLEY S.J., ASHFOLD M.N.R., CHERNS D., The growth of transparent conducting ZnO films by pulsed laser ablation, Surface and Coatings Technology 177–178, 2004, pp. 271–276.
• [14]KHRANOVSKYY V., GROSSNER U., LAZORENKO V., LASHKAREV G., SVENSSON B.G., YAKIMOVA R., PEMOCVD of ZnO thin films, doped by Ga and some of their properties, Superlattices and Microstructures 39(1–4), 2006, pp. 275–281.
• [15]GUPTA R.K., GHOSH K., PATEL R., KAHOL P.K., Effect of substrate temperature on opto-electrical properties of Nb-doped In2O3 thin films, Journal of Crystal Growth 310(19), 2008, pp. 4336–4339.
• [16]JU H., HWANG S., JEONG C.-O., PARK S.-H., CHOI J.-G., PARK C., Low-resistivity indium tantalum oxide films by magnetron sputtering, Applied Physics A 79(1), 2004, pp. 109–111.
• [17]ZHANG B., DONG X., XU X., WU J., Preparation and characterization of tantalum-doped indium tin oxide films deposited by magnetron sputtering, Scripta Materialia 58(3), 2008, pp. 203–206.
• [18]FENG P., XUE X.Y., LIU Y.G., WANG T.H., Highly sensitive ethanol sensors based on {100}-bounded In2O3 nanocrystals due to face contact, Applied Physics Letters 89(24), 2006, p. 243514.
• [19]RANI S., ROY S.C., BHATNAGAR M.C., Effect of Fe doping on the gas sensing properties of nano-crystalline SnO2 thin films, Sensors and Actuators B 122(1), 2007, pp. 204–210.
• [20]CEBULLA R., WENDT R., ELLMER K., Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties, Journal of Applied Physics 83(2), 1998, pp. 1087–1095.
• [21]KO H., TAI W.P., KIM K.C., KIM S.H., SUH S.J., KIM Y.S., Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering, Journal of Crystal Growth 277(1–4), 2005, pp. 352–358.
• [22]BURSTEIN E., Anomalous optical absorption limit in InSb, Physical Review 93(3), 1954, pp. 632–633.