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ZnO thin films doped with aluminum (AZO) were deposited on silicon dioxide covered type texturized Si substrates by radio frequency magnetron sputtering, to fabricate AZO/SiO2/p-Si heterojunction, as an absorber for ultraviolet cell. The microstructure, optical and electrical properties of the Al-doped ZnO films were characterized by XRD, SEM, UV-VIS spectrophotometer, current-voltage measurement, and four point probe technique, respectively. The results show that AZO films are of good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows rectifying behavior under a dark condition. The ideality factor and the saturation current of this diode are 24.42 and 8.92×10-5 A, respectively. And the values of IF/IR (IF and IR stand for forward and reverse current, respectively) at 10 V are found to be as high as 38. It shows fairly good rectifying behavior indicating formation of a diode between AZO and p-Si.
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Tom
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15--24
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Bibliogr. 12 poz.
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- SHU-Solar E PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China
Bibliografia
- [1] WENAS W.W., SYARIF RIYADI, Carrier transport in high-efficiency ZnO/SiO2 /Si solar cells, Solar Energy Materials and Solar Cells 90(18–19), 2006, pp. 3261–3267.
- [2] DENGYUAN SONG, ARMIN G. ABERLE, JAMES XIA, Optimisation of ZnO:Al films by change of sputter gas pressure for solar cell application, Applied Surface Science 195(1–4), 2002, pp. 291–296.
- [3] JAEHYEONG LEE, DONGJIN LEE, DONGGUN LIM, KEAJOON YANG, Structural, electrical and optical properties of ZnO:Al films deposited on flexible organic substrates for solar cell applications, Thin Solid Films 515(15) ,2007, pp. 6094–6098.
- [4] BINGZHI HUO, LIZHONG HU, HEQIU ZHANG, ZnO/MgO distributed Bragg reflectors, Optica Applicata 39(1), 2009, pp. 169–174.
- [5] AJIMSHA R.S., JAYARAJ M.K., KUKREJA L.M., Electrical Characteristics of n-ZnO/p-Si heterojunction diodes grown by pulsed laser deposition at different oxygen pressures, Journal of Electronic Materials 37(5), 2008, pp. 770–775.
- [6] DENGYUAN SONG, NEUHAUS D.-H., XIA J., ABERLE A.G., Structure and characteristics of ZnO:Al/n-Si heterojunctions prepared by magnetron sputtering, Thin Solid Films 422(1–2), 2002, pp. 180–185.
- [7] KUMAR N., KAUR R., MEHRA R.M., Characterization of sol–gel derived yttrium-doped n-ZnO/p-Si heterostructure, Materials Science-Poland 24(1), 2006, pp. 375–383.
- [8] HUI SUN, QIFENG ZHANG, JINLEIWU, Electroluminescence from ZnO nanorods with an n-ZnO/p-Si heterojunction structure, Nanotechnology 17(9), 2006, pp. 2271–2274.
- [9] PEILIANG CHEN, XIANGYANG MA, DEREN YANG, Ultraviolet electroluminescence from ZnO/p-Si heterojunctions, Journal of Applied Physics 101(5), 2007, p. 053103
- [10] HEBO, ZHONGQUANMA, XUJING, ZHAOLEI, ZHANGNANSHENG, LIFENG, SHENCHENG, SHENLING, MENGXIAJIE, ZHOUCHENGYUE, YUZHENGSHAN, YINYANTING, Fabrication and photoelectrical properties of a novel violet and blue enhanced SINP silicon photovoltaic device, Optica Applicata 39(3), 2009, pp. 547–560.
- [11] LEE J.Y., CHOI Y.S., KIM J.H., PARK M.O., IM S., Optimizing n-ZnO/p-Si heterojunctions for photodiode applications, Thin Solid Films 403–404, 2002, pp. 553–557.
- [12] GHOSH A.K., FISHMAN C., FENG T., Theoretical efficiency of SnO2 /Si solar cells, Journal of Applied Physics 50(5), 1979, pp. 3454–3458.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0012-0124