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Tytuł artykułu

Malter effect in thin ITO films

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Wybrane pełne teksty z tego czasopisma
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Języki publikacji
EN
Abstrakty
EN
The subject of the study was field influence on electron emission into vacuum from ITO films deposited on glass surface. The films were deposited onto both surfaces of the glass and examined using the Malter effect controlled by electric field. One of the layers was the field electrode and the other was treated as the electron emitter. The bias voltage was applied to the field electrode. The analysis was carried out at a pressure of 10-5 Pa. Dependences of the secondary emission coefficient on the bias voltage and energy distributions of secondary electrons were determined. The diagrams obtained are characterized by high non-monotonic behaviour. The voltage pulse amplitude spectra were recorded in the multichannel amplitude analyzer. It has been found that pulses count depends exponentially on the bias voltage. The emission efficiency at the same inducing field is affected by the state in which the sample was before the measurement. This means that the field induced electron emission shows hysteresis-like behaviour. The existence of this effect proves that the electric field causes some irreversible changes in the electron emitting ITO layer.
Czasopismo
Rocznik
Strony
903--914
Opis fizyczny
bibliogr. 27 poz.,
Twórcy
autor
autor
  • Institute of Physics, Jan Długosz University, al. Armii Krajowej 13/15, 42-201 Częstochowa, Poland
Bibliografia
  • [1] MALTER L., Thin film field emisson, Physical Review 50(1), 1936, pp. 48–58.
  • [2] KOLLER L.R., JOHNSON R.P., Visual observations on the Malter effect, Physical Review 52(5), 1937, pp. 519–523.
  • [3] JEONGHEE LEE, TAEWON JEONG, SEGI YU, SUNGHWAN JIN, JUNGNA HEO, WHIKUN YI, KIM J.M., Secondary electron emission of MgO thin layers prepared by the spin coating method, Journal of Vacuum Science and Technology B 19(4), 2001, pp. 1366–1369.
  • [4] KISELYOV V.K., KULESHOV E.M., LAPTIY V.K., Research of terahertz-band gas HCN laser with the Malter effect in hollow cathode, Telecommunications and Radio Engineering 63(7–12), 2005, pp. 913–923.
  • [5] HUA QIN, HYUN-SEOK KIM, BLICK R.H., WESTPHALL M.S., SMITH L.M., Subthreshold field emission from thin silicon membranes, Applied Physics Letters 91(18), 2007, p. 183506.
  • [6] WEIJTENS C.H.L., VAN LOON P.A.C., Low resistive, ohmic contacts to indium tin oxide, Journal of the Electrochemical Society 137(12), 1990, pp. 3928–3930.
  • [7] KHALID A.H., REZAZADEH A.A., Fabrication and characterisation of transparent-gate filed effect transistors using indium tin oxide, IEE Proceedings: Optoelectronics 143(1), 1996, pp. 7–11.
  • [8] ZAKRZEWSKA K., LEJA E., The electrical and optical properties of CdIn2O4 thin films prepared by dc reactive sputtering, Vacuum 36(7–9), 1986, pp. 485–487.
  • [9] LEJA E., STAPIŃSKI T., MARSZAŁEK K., Electrical and optical properties of conducting N-type Cd2SnO4 thin films, Thin Solid Films 125(1–2), 1985, pp. 119–122.
  • [10] GRANQVIST C.G., HULTAKER A., Transparent and conducting ITO films: new developments and applications, Thin Solid Films 411(1), 2002, pp. 1–5.
  • [11] MAY C., STRUMPFEL J., ITO coating by reactive magnetron sputtering–comparison of properties from DC and MF processing, Thin Solid Films 351(1–2), 1999, pp. 48–52.
  • [12] VUL’ A.YA., DIDEIKIN A., Photodetectors based on metal-tunnel insulator-semiconductor structures, Sensors and Actuators A: Physical 39(1), 1993, pp. 7–18.
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  • [14] ORITA M., TANJI H., MIZUNO M., ADACHI H., TANAKA I., Mechanism of electrical conductivity of transparent InGaZnO4, Physical Review B 61(3), 2000, pp. 1811–1816.
  • [15] EDERTH J., JOHNSSON P., NIKLASSON G.A., HOEL A., HULTAKER A., HESZLER P., GRANQVIST C.G., VAN DOORN A.R., JONGERIUS M.J., BURGARD D., Electrical and optical properties of thin films consisting of tin-doped indium oxide nanoparticles, Physical Review B 68(15), 2003, p. 155410.
  • [16] BOYCHEVA S., KRASILNIKOVA SYTCHKOVA A., PIEGARI A., Optical and electrical characterization of r.f. sputtered ITO films developed as art protection coatings, Thin Solid Films 515(24), 2007, pp. 8474–8478.
  • [17] GROSS M., WINNACKER A., WELLMANN P.J., Electrical, optical and morphological properties of nanoparticle indium-tin-oxide layers, Thin Solid Films 515(24), 2007, pp. 8567–8572.
  • [18] FITTING H.-J., MÜLLER G.O., MACH R., REINSPERGER G.U., HINGST TH., SCHREIBER E., Vacuum emission of hot electrons from ZnS, Physica Status Solidi (a) 121(1), 1990, pp. 305–313.
  • [19] FITTING H.-J., SCHREIBER E., HINGST TH., Avalanche measurement in ZnS by vacuum emission, Physica Status Solidi (a) 122(2), 1990, pp. K165–K168.
  • [20] OLESIK J., Influence of an internal electric field in a sample on the photoemission phenomenon, Thin Solid Films 346(1–2), 1999, pp. 191–195.
  • [21] OLESIK J., CAŁUSIŃSKI B., Influence of an internal electric field in a sample on the secondary electron emission phenomenon, Thin Solid Films 238(2), 1994, pp. 271–275.
  • [22] IBACH H., Surface vibrations of silicon detected by low-energy electron spectroscopy, Physical Review Letters 27(5), 1971, pp. 253–256.
  • [23] SHABBIR A. BASHAR, Study of Indium Tin Oxide (ITO) for Novel Optoelectronic Devices, Ph.D. Thesis, Department of Electronic Engineering, University of London, 1998.
  • [24] FITTING H.-J., HINGST TH., SCHREIBER E., Breakdown and high-energy electron vacuum emission of MIS-structures, Journal of Physics D: Applied Physics 32(16), 1999, pp. 1963–1970.
  • [25] EDERTH J., HULTAKER A., NIKLASSON G.A., HESZLER P., VAN DOORN A.R., JONGERIUS M.J., BURGARD D., GRANQVIST C.G., Thin porous indium tin oxide nanoparticle films: effects of annealing in vacuum and air, Applied Physics A: Materials Science and Processing 81(7), 2005,pp. 1363–1368.
  • [26] EDERTH J., HESZLER P., HULTAKER A., NIKLASSON G.A., GRANQVIST C.G., Indium tin oxide films made from nanoparticles: models for the optical and electrical properties, Thin Solid Films 445(4), 2003, pp. 199–206.
  • [27] EDERTH J., NIKLASSON G.A., HULTAKER A., HESZLER P., GRANQVIST C.G., VAN DOORN A.R., JONGERIUS M.J., BURGARD D., Characterization of porous indium tin oxide thin films using effective medium theory, Journal of Applied Physics 93(2), 2003, pp. 984–988.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0012-0114
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