Interface influence on structural properties of InAs/GaSb type-II superlattices

• Autorzy: Kubacka-Traczyk J. , Sankowska I. , Kaniowski J.
• Języki publikacji: EN

Abstrakty

EN

Theoretical studies of interface impact on structural properties of InAs/GaSb type-II superlattices were carried out. Multilayer structures used for mid-infrared detection were considered. The superlattices examined consisted of 190 pairs of 9 monolayers (MLs) of InAs and 10 MLs of GaSb. Both types of interfaces, i.e., "GaAs-like" as well as "InSb-like", were analyzed. The simulations were performed using dynamical theory of diffraction for different thicknesses of interface layers. The lattice mismatch was extracted from X-ray diffraction profiles. The analysis performed shows that the strain-balanced InAs/GaSb superlattice can be optimized by using thin InSb-like or GaAs-like interface layers simultaneously.

Słowa kluczowe

EN

interface; II type superlattice; InAs/GaSb

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2009
• Tom: Vol. 39, nr 4
• Strony: 875--879
• Opis fizyczny: bibliogr. 9 poz.,

Twórcy

autor

Kubacka-Traczyk J.

autor

Sankowska I.

autor

Kaniowski J.

Bibliografia

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• [8] NOSHO B.Z., BENNETT B.R., WHITMAN L.J., GOLDENBERG M., Effects of As2 versus As4 on InAs/GaSb heterostructures: As-for-Sb exchange and film stability, Journal of Vacuum Science and Technology B 19(4), 2001, pp. 1626–1630.
• [9] KASPI R., Compositional abruptness at the InAs-on-GaSb interface: optimizing growth by using the Sb desorption signature, Journal of Crystal Growth 201/202, 1999, pp. 864–867.