Modification of energy bandgap in lattice mismatched InGaAs/GaAs heterostructures

• Autorzy: Gelczuk Ł. , Dąbrowska-Szata
• Języki publikacji: EN

Abstrakty

EN

This paper addresses some physical aspects and presents experimental results concerning to phenomena which evoke modification of band structure in lattice mismatched InGaAs/GaAs heterostructures, namely the introduction of extra deep-lying energy levels in the bandgap. The deep level transient spectroscopy reveals commonly observed deep level defects in GaAs-based structures associated with native point defects as well as misfit dislocations related to strain relaxation processes.

Słowa kluczowe

EN

bandgap energy; lattice mismatch; deep level defects; InGaAs heterostructures; deep level transient spectroscopy (DLTS)

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2009
• Tom: Vol. 39, nr 4
• Strony: 845--852
• Opis fizyczny: bibliogr. 19 poz.,

Twórcy

autor

Gelczuk Ł.

autor

Dąbrowska-Szata

• Faculty of Microsystem Electronics and Photonics, Division of Technology and Diagnostics of Microelectronics Structures, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

• [1] SINGH J., Electronic and Optoelectronic Properties of Semiconductor Structures, University Press, Cambridge 2003, pp. 109–149.
• [2] SCHRÖTER W., HEDEMANN H., KVEDER V, RIEDEL F., Measurements of energy spectra of extended defects, Journal of Physics: Condensed Matter 14(48), 2002, pp. 13047–13059.
• [3] GELCZUK Ł., DĄBROWSKA-SZATA M., JÓŹWIAK G., Distinguishing and identifying point and extended defects in DLTS measurements, Materials Science Poland 23(3), 2005, pp. 625–641.
• [4] DĄBROWSKA-SZATA M., Deep Level Spectroscopy in Semiconductor Structures, Publishing House of Wrocław University of Technology, Wrocław 2009 (in Polish).
• [5] BIR G.L., PIKUS G., Symmetry and Strain-Induced Effects in Semiconductors, Wiley, New York 1974.
• [6] WEBER E.R., Understanding of defects in semiconductors as key to advancing device technology, Physica B: Condensed Matter 340–342, 2003, pp. 1–14.
• [7] LANG D.V., Deep-level transient spectroscopy: A new method to characterize traps in semiconductors, Journal of Applied Physics 45(7), 1974, pp. 3023–3032.
• [8] LANG D.V., Recalling the origins of DLTS, Physica B: Condensed Matter 401–402, 2007, pp. 7–9.
• [9] GELCZUK Ł., SERAFIŃCZUK J., DĄBROWSKA-SZATA M., DŁUŻEWSKI P., Anisotropic misfit strain relaxation in lattice mismatched InGaAs/GaAs heterostructures grown by MOVPE, Journal of Crystal Growth 310(12), 2008, pp. 3014–3018.
• [10] GELCZUK Ł., DĄBROWSKA-SZATA M., JÓŹWIAK G., RADZIEWICZ D., Electronic states at misfit dislocations in partially relaxed InGaAs/GaAs heterostructures, Physica B: Condensed Matter 388(1–2), 2007, pp. 195–199.
• [11] WOSIŃSKI T., MĄKOSA A., WITCZAK Z., Transformation of native defects in bulk GaAs under ultrasonic vibration, Semiconductor Science and Technology 9(11), 1994, pp. 2047–2052.
• [12] MARRAKCHI G., KALBOUSSI A., BREMOND G., GUILLOT G., ALAYA S., MAAREF H., FORNARI R., Stoichiometry-dependent native acceptor and donor levels in Ga-rich-n-type gallium arsenide, Journal of Applied Physics 71(7), 1992, pp. 3325–3329.
• [13] LEFEVRE H., SCHULZ M., Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductors, Applied Physics 12(1), 1977, pp. 45–53.
• [14] SKOWRONSKI M., Oxygen related point defects in GaAs, Materials Science Forum 83–87, 1992, pp. 377–388.
• [15] KAMINSKA M., WEBER E.R., EL2 defect in GaAs, in Imperfections in III/V materials, [In] Semiconductors and Semimetals, R.K. Willardson, A.C. Beer, E.R. Weber [Eds.], Academic Press,
• [16] FIGIELSKI T., Recombination at dislocations, Solid-State Electronics 21(11–12), 1978, pp. 1403–1412.
• [17] FIGIELSKI T., Electron emission from extended defects: DLTS signal in case of dislocation traps, Physica Status Solidi (A) 121(1), 1990, pp. 187–193.
• [18] WOSIŃSKI T., YASTRUBCHAK O., MĄKOSA A., FIGIELSKI T., Deep-level defects at lattice-mismatched interfaces in GaAs-based heterojunctions, Journal of Physics: Condensed Matter 12(49), 2000, pp. 10153–10159.
• [19] YASTRUBCHAK O., WOSIŃSKI T., MĄKOSA A., FIGIELSKI T., TÓTH A.L., Capture kinetics at deep-level defects in lattice-mismatched GaAs-based heterostructures, Physica B: Condensed Matter 308–310, 2001, pp. 757–760.