(100) GaAs surface treatment prior to contact metal deposition in AlGaAs/GaAs quantum cascade laser processing

• Autorzy: Papis E. , Barańska A. , Karbownik P. , Szerling A. , Wójcik-Jedlińska A. , Bugajski M. , Rzodkiewicz W. , Szade J. , Wawro A.
• Języki publikacji: EN

Abstrakty

EN

The effects of HCl-based chemical and Ar+ sputter etching treatment on (100) GaAs surface properties with the aim to develop the procedure of surface preparation before metal deposition have been investigated. Variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy, atomic force microscopy and photoluminescence have been used to study the surface characterization. We show that combining chemical etching in 5% HCl with Ar+ sputter etching gives the best results for surface cleaning prior to metal deposition. The application of this two-step treatment allows to obtain Ni/AuGe/Ni/Au ohmic contact with rc = 2×10–6 .omega.cm2 with excellent adhesion and long-term thermal stability.

Słowa kluczowe

EN

GaAs; surface treatment; sputter etching

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2009
• Tom: Vol. 39, nr 4
• Strony: 787--797
• Opis fizyczny: bibliogr. 13 poz.,

Twórcy

autor

Papis E.

autor

Barańska A.

autor

Karbownik P.

autor

Szerling A.

autor

Wójcik-Jedlińska A.

autor

Bugajski M.

autor

Rzodkiewicz W.

autor

Szade J.

autor

Wawro A.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

Bibliografia

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