Cr ohmic contact on an Ar+ ion modified 6H-SiC(0001) surface

• Autorzy: Grodzicki M. , Chrzanowski J. , Mazur P. , Zuber S. , Ciszewski A.
• Języki publikacji: EN

Abstrakty

EN

Chromium layers were vapor deposited under ultrahigh vacuum onto samples cut out of a single crystal of 6H-SiC(0001) that were Ar+ bombardment modified. The substrates and electrical contacts formed by the Cr adlayer were characterized in situ by current-sensing atomic force microscopy (CS-AFM) and X-ray photoelectron spectroscopy (XPS). Cr/SiC contacts reveal a good I-V characteristic linearity without the use of heavy impurity doping and high-temperature annealing.

Słowa kluczowe

EN

silicon carbide; chromium; electric contacts; AFM

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2009
• Tom: Vol. 39, nr 4
• Strony: 765--772
• Opis fizyczny: bibliog.12 poz.,

Twórcy

autor

Grodzicki M.

autor

Chrzanowski J.

autor

Mazur P.

autor

Zuber S.

autor

Ciszewski A.

• Institute of Experimental Physics, University of Wrocław, plac Maxa Borna 9, 50-204 Wrocław, Poland

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