Surface photocurrent nonuniformities in MSM detectors fabricated in gallium nitride heteroepitaxial layers

• Autorzy: Szyszka A. , Paszkiewicz B. , Paszkiewicz R. , Tłaczała M.
• Języki publikacji: EN

Abstrakty

EN

A correlation of surface potential maps and photocurrent distribution images in metal-semiconductor-metal (MSM) structures allows to notice spatial nonuniformities in detector principle of operation. This effect exists only for low frequency modulation of optical excitation. This phenomenon was explained by the inhomogeneity of potential barriers and surface states density in heteroepitaxial gallium nitride layers caused by their columnar structure.

Słowa kluczowe

EN

metal-semiconductor-metal (MSM); UV detectors; gallium nitride; optical beam induced current (OBIC); scanning surface potential microscopy (SSPM)

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2009
• Tom: Vol. 39, nr 4
• Strony: 723--728
• Opis fizyczny: bibliogr. 9 poz.,

Twórcy

autor

Szyszka A.

autor

Paszkiewicz B.

autor

Paszkiewicz R.

autor

Tłaczała M.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

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