Properties of AlNx thin films prepared by DC reactive magnetron sputtering

• Autorzy: Stafiniak A. , Muszyńska D. , Szyszka A. , Paszkiewicz B. , Ptasiński K. , Patela S. , Paszkiewicz R. , Tłaczała M.
• Języki publikacji: EN

Abstrakty

EN

In this paper, the results of investigation of the influence of cathode current on optical and dielectric AlNx thin-film properties are presented. AlNx films were prepared by pulsed DC reactive magnetron sputtering of Al target on substrates at room temperature. For characterization of fabricated test structures C-V spectroscopy, ellipsometry measurement and atomic force microscopy (AFM) were used.

Słowa kluczowe

EN

aluminum nitride (AlN); thin films; reactive magnetron sputtering; alternative dielectrics

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2009
• Tom: Vol. 39, nr 4
• Strony: 717--722
• Opis fizyczny: bibliogr. 6 poz.,

Twórcy

autor

Stafiniak A.

autor

Muszyńska D.

autor

Szyszka A.

autor

Paszkiewicz B.

autor

Ptasiński K.

autor

Patela S.

autor

Paszkiewicz R.

autor

Tłaczała M.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

• [1] GARCIA-MENDEZ M., MORALES-RODRIGUEZ S., MACHORRO R., DE LA CRUZ W., Characterization of AlN thin films deposited by DC reactive magnetron sputtering, Revista Mexicana De Fisica 54(4), 2008, pp. 271–278.
• [2] DIMITROVA V., MANOVA D., VALCHEVA E., Optical and dielectric properties of dc magnetron sputtered AlN thin films correlated with deposition conditions, Materials Science and Engineering B 68(1), 1999, pp. 1–4.
• [3] GOULD R.D., AWAN S.A., Dielectric properties of AlNx thin films prepared by RF magnetron sputtering of Al using a N2 /Ar sputtering gas mixture, Thin Solid Films 469–470, 2004, pp. 184–189.
• [4] CHEN C., CHEN D.J., XIE Z.L., HAN P., ZHANG R., ZHENG Y.D., LI Z.H., JIAO G., CHEN T.S., Effects of an AlN passivation layer on the microstructure and electronic properties of AlGaN/GaN heterostructures, Applied Physics A: Materials Science and Processing 90(3), 2008, pp. 447–449.
• [5] CHEN T., JIAO G., LI Z., LI F., SHAO K., YANG N., AlGaN/GaN MIS HEMT with AlN dielectric, Proceedings of CS MANTECH Conference, April 24–27, 2006, Vancouver, British Columbia, Canada.
• [6] ADAM T., KOLODZEY J., SWANN C.P., TASO M.W., RABOLT J.F., The electrical propeties of MIS capacitors with ALN gate dielectrics, Applied Surface Science 175–176, 2001, pp. 428–435.