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An impact of the electrical pumping scheme on some VCSEL performance characteristics

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Języki publikacji
EN
Abstrakty
EN
A comprehensive theoretical model of an operation of vertical-cavity surface-emitting diode lasers (VCSELs) is used to compare anticipated room-temperature (RT) continuous-wave (CW) performance of three modern VCSEL designs: the MESA VCSEL with the upper ring contact on the upper p-side DBR structure and the bottom broad-area contact as well as the single and the double intra-cavity contacted VCSELs. The MESA VCSEL has been found to demonstrate the best mode selectivity because its desired single fundamental mode operation is expected even for the largest 20-žm diameter devices. However its RT CW lasing thresholds are by about 30% higher than those for both intra-cavity contacted VCSELs because of increasing free-carrier absorption and heat generation. Therefore large-size MESA VCSELs cannot operate at higher temperatures and/or for higher operation currents. On the contrary, although both intra-cavity contacted VCSELs ensure single-fundamental-mode operation for smaller devices only, they seem to operate properly also at higher temperatures and operation currents. Therefore, with an exception of some special applications, intra-cavity contacted VCSELs currently seem to be the best VCSEL designs.
Czasopismo
Rocznik
Strony
691--699
Opis fizyczny
bibliogr. 8 poz.,
Twórcy
autor
  • Laboratory of Computer Physics, Institute of Physics, Technical University of Łódź, ul. Wólczańska 219, 90-924 Łódź, Poland
Bibliografia
  • [1] MROZIEWICZ B., BUGAJSKI M., NAKWASKI W., Physics of Semiconductor Lasers, North-Holland, Amsterdam 1991, Chapter 4.
  • [2] YANG H.-P.D., LU C., HSIAO R., CHIOU C., LEE C., HUANG C., YU H., WANG C., LIN K., MALEEV N.A., KOVSH A.R., SUNG C., LAI C., WANG J., CHEN J., LEE T., CHI J.Y., Characteristics of MOCVDand MBE-grown InGa(N)As VCSELs, Semiconductor Science and Technology 20(8), 2005, pp. 834–839.
  • [3] NAKWASKI W., Principles of VCSEL designing, Opto-Electronics Review 16(1), 2008, pp. 18–26. An impact of the electrical pumping scheme ... 699
  • [4] WENZEL H., WÜNSCHE H.-J., The effective frequency method in the analysis of vertical-cavity surface-emitting lasers, IEEE Journal of Quantum Electronics 33(7), 1997, pp. 1156–1162.
  • [5] SARZAŁA R.P., NAKWASKI W., Optimization of 1.3 m GaAs-based oxide-confined (GaIn)(NAs) vertical-cavity surface-emitting lasers for low-threshold room-temperature operations, Journal of Physics: Condensed Matter 16(31), 2004, pp. S3121–S3140.
  • [6] SARZAŁA R.P., Designing strategy to enhance mode selectivity of higher-output oxide-confined vertical-cavity surface-emitting lasers, Applied Physics A: Materials Science and Processing 81(2), 2005, pp. 275–283.
  • [7] XU D., TONG C., YOON S.F., FAN W.-J., ZHANG D.H., WASIAK M., PISKORSKI Ł., GUTOWSKI K., SARZAŁA R.P., NAKWASKI W., Room-temperature continuous-wave operation of the In(Ga)As/GaAs quantum-dot VCSELs for the 1.3 m optical-fibre communications, Semiconductor Science and Technology 24(5), 2009, p. 055003.
  • [8] RAMAKRISHNAN A., STEINLE G., SUPPER D., STOLZ W., EBBINGHAUS G., Nitrogen incorporation in (GaIn)(NAs) for 1.3 m VCSEL grown with MOVPE, Journal of Crystal Growth 248, 2003, pp. 457–462.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0012-0086
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