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Low resistance ohmic contacts to n-GaAs for application in GaAs/AlGaAs quantum cascade lasers

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Języki publikacji
EN
Abstrakty
EN
This paper reports on the results of optimization of ohmic contacts for GaAs/AlGaAs quantum cascade lasers (QCLs). Technological parameters during optimization concerned surface preparation, evaporation method, and thermal treatment. The aim of this research was to obtain low resistance and time stable ohmic contacts. The average specific contact resistance was 6×10-7 ?cm-2 with record value below 3×10-7 ?cm-2. It appears that the crucial role in contact formation is played by the in-situ surface pretreatment and thermal processing. Circular transmission line method (CTLM) was applied for electrical characterization of Ni/AuGe/Ni/Au metallization system. Secondary ion mass spectroscopy (SIMS) was used for determination of Au diffusion into semiconductor. The system presented was used in fabrication of pulse operating QCLs. The lasers mounted with diamond heat spreaders on copper block cooled by liquid nitrogen (LN) achieved optical powers over 1 W, threshold current density values of 7 kAcm-2 and differential efficiencies above 1 W/A.
Czasopismo
Rocznik
Strony
655--661
Opis fizyczny
bibliogr. 10 poz.,
Twórcy
autor
autor
autor
autor
autor
autor
autor
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland
Bibliografia
  • [1] PAGE H., BECKER C., ROBERTSON A., GLASTRE G., ORTIZ V., SIRTORI C., 300 K operation of a GaAs-based quantum-cascade laser at ≈9 m, Applied Physics Letters 78(22), 2001,pp. 3529–3531.
  • [2] KOSIEL K., BUGAJSKI M., SZERLING A., KUBACKA-TRACZYK J., KARBOWNIK P., PRUSZYŃSKA--KARBOWNIK E., MUSZALSKI J., ŁASZCZ A., ROMANOWSKI P., WASIAK M., NAKWASKI W., MAKAROWA I., PERLIN P., 77 K operation of AlGaAs/GaAs quantum cascade laser, Photonics Letters of Poland 1(1), 2009, pp. 16–18.
  • [3] PASHLEY M.D., HABERERN K.W., FEENSTRA R.M., KIRCHNER P.D., Different Fermi-level pinning behavior on n- and p-type GaAs(001), Physical Review B 48(7), 1993, pp. 4612–4615.
  • [4] SZERLING A., KARBOWNIK P., ŁASZCZ A., KOSIEL K., BUGAJSKI M., Low-resistance p-type ohmic contacts for high-power InGaAs/GaAs-980 nm CW semiconductor lasers, Vacuum 82(10), 2008, pp. 977–981.
  • [5] SHIN Y.-C., MURAKAMI M., WILKIE E.L., CALLEGARI A.C., Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n-type GaAs, Journal of Applied Physics 62(2), 1987, pp. 582–590.
  • [6] STOCK J., MALINDRETOS J., INDLEKOFER K. M., PÖTTGENS M., FÖRSTER A., LÜTH H., A vertical resonant tunneling transistor for application in digital logic circuits, IEEE Transactions on Electron Devices 48(6), 2001, pp. 1028–1032.
  • [7] MURAKAI M., Development of refractory ohmic contact materials for gallium arsenide compound semiconductors, Science and Technology of Advanced Materials 3(1), 2002, pp. 1–27.
  • [8] VIDIMARI F., Improved ohmic properties of Au-Ge contacts to thin n-GaAs layers alloyed with an SiO2 overlayer, Electronics Letters 15(21), 1979, pp. 674–676.
  • [9] REEVES G.K., Specific contact resistance using a circular transmission line model, Solid-State Electronics 23(5), 1980, pp. 487–490.
  • [10] BARAŃSKA A., Molecular beam epitaxy and processing for GaAs/AlGaAs quantum cascade lasers, MSc Thesis, Warsaw University of Technology 2008, p. 62 (in Polish).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0012-0082
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