Growth orientation transition and metal-like conductivity of Ti, Al co-doped ZnO films

• Autorzy: Jiang M. , Liu X. , Wang H. , Xu J.
• Języki publikacji: EN

Abstrakty

EN

Ti, Al co-doped ZnO thin films have been fabricated by radio frequency magnetron sputtering and post-vacuum-annealing techniques on glass substrates. For annealing temperatures below 723 K, the room temperature resistivity of these films was found to decrease as the annealing temperature increased. The lowest resistivity (6.75×10-4 ?ocm), indicating metal-like conductivity, was found at 723 K. The post-annealing temperature dependent on the resistivity of these films also showed a metal - semiconductor transition at 723 K. It was also found a growth orientation transition of these films from (002) to (100) with the annealing temperature up to 773 K.

Słowa kluczowe

EN

growth-orientation transition; metal-like conductivity; Ti; Al co-doped; ZnO thin film; vacuum annealing

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2010
• Tom: Vol. 28, No. 1
• Strony: 273--280
• Opis fizyczny: Bibliogr. 15 poz.

Twórcy

autor

Jiang M.

autor

Liu X.

autor

Wang H.

autor

Xu J.

• Guangxi Key Laboratory of Information Materials Guilin University of Electronic Technology Guilin, Guangxi 541004 P.R. China

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