Characterization of laser ablated AgInSe2 films

• Autorzy: Pathak D. , Bedi R. K. , Kaur D.
• Języki publikacji: EN

Abstrakty

EN

AgInSe2 (AIS) thin films have been grown directly on silicon by means of a pulsed laser deposition technique. The X-ray diffraction studies show that the films are textured in the (112) direction. Increase of the substrate temperature results in a more ordered structure. Composition of the samples has been analysed by EDAX. It was found that the stoichiometry is better maintained with the PLD technique than with other traditional methods like thermal evaporation. The optical studies of the films show that the optical band gap is about 1.20 eV. The results of investigations may be of interest for a better understanding of the growth processes of chalcopyrite thin films on silicon materials.

Słowa kluczowe

EN

pulse laser ablation; silicon wafers; heterojunction; FESEM; direct band gap materials

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2010
• Tom: Vol. 28, No. 1
• Strony: 199--205
• Opis fizyczny: Bibliogr. 19 poz.

Twórcy

autor

Pathak D.

autor

Bedi R. K.

autor

Kaur D.

• Department of Physics Guru Nanak Dev University Amritsar India

Bibliografia

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