Raman scattering of ZnO films prepared by the laser molecular beam epitaxy

• Autorzy: Wang C. , Chen Z. , He Y. , Li L. , Zhang D.
• Języki publikacji: EN

Abstrakty

EN

A series of ZnO films have been prepared on Si (100) substrate at various oxygen pressures and at various substrate temperatures by using a laser molecular beam epitaxy system. Their structure was investigated by the Raman spectroscopy and X-ray diffraction. Raman spectra showed that only E2(low) and E2 (high) modes were present in all ZnO films. The E2 (low) mode peak changed from disperse to sharp at first and then became more dispersed as either the oxygen pressure or the substrate temperature increased. Its intensity reached a maximum either under the oxygen pressure of 1 Pa or at 773 K. The analyses showed that the sharper and stronger the E2 (low) mode peak, the better the crystal quality, which was confirmed by the X-ray diffraction. Moreover, every E2 (high) mode peak shifted to lower Raman frequencies compared with ZnO single crystal, implying that a tensile stress occurred in all films, which was also proved by the X-ray diffraction. All results indicated that Raman scattering is one of the most useful methods to investigate the structure of ZnO films. In addition, the intensity of Si Raman scattering was enhanced in our results, which might be due to surface-enhanced Raman spectroscopy.

Słowa kluczowe

EN

Raman scattering; X-ray diffraction; ZnO films; laser molecular beam epitaxy

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2010
• Tom: Vol. 28, No. 1
• Strony: 153--161
• Opis fizyczny: Bibliogr. 18 poz.

Twórcy

autor

Wang C.

autor

Chen Z.

autor

He Y.

autor

Li L.

autor

Zhang D.

• School of Physics Science and Information Engineering Liaocheng University Liaocheng 252059 Shandong Province P.R. China

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