Ambipolar injection into pentacene field effect transistor observed by time-resolved optical second harmonic generation imaging

• Autorzy: Manaka T. , Nakao M. , Lim E. , Iwamoto M.
• Języki publikacji: EN

Abstrakty

EN

Ambipolar carrier injection from gold electrode into pentacene was investigated by time-resolved optical second harmonic generation (TRM-SHG) imaging. Smooth hole injection is verified by rapid decrease of the SHG intensity at the electrode edge, indicating the absence of an injection barrier. In contrast, TRM-SHG results clearly indicated the presence of electron injection from the high-work function metal into the electrode, though after injection electrons were trapped in the channel and could not contribute to the conduction. Transient electric field distribution due to the injected holes and electrons were evaluated based on the SHG intensity distribution.

Słowa kluczowe

EN

optical second harmonic generation; SHG; organic field effect transistor; carrier injection

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2009
• Tom: Vol. 27, No. 3
• Strony: 709--717
• Opis fizyczny: Bibliogr. 19 poz.

Twórcy

autor

Manaka T.

autor

Nakao M.

autor

Lim E.

autor

Iwamoto M.

• Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan

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