Effects of substrate temperature on crystallite orientation of HfO2 thin films

• Autorzy: Wang L. , Fan B. , Wang Z. , Cheng X. , Wu Y. , Chen L.
• Języki publikacji: EN

Abstrakty

EN

Hafnium dioxide thin films were deposited on fused silica substrates by reactive electron beam evaporation at three different substrate temperatures. After deposition, hafnium dioxide thin films were annealed in the ambient atmosphere for two hours at 500 °C and 1000 °C, respectively. X-ray diffractometry was used to study physical characterizations of as-deposited and annealed hafnium dioxide. The experimental results showed that hafnium dioxide fabricated at various substrate temperatures had different crystallite orientations after annealing at 500 °C or 1000 °C. These facts suggest that substrate temperature influences not only the crystallization state of as-deposited hafnium dioxide but also crystallite re-orientation after annealing.

Słowa kluczowe

EN

hafnium dioxide; reactive electron-beam evaporation; crystallite re-orientation

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2009
• Tom: Vol. 27, No. 2
• Strony: 547--550
• Opis fizyczny: Bibliogr. 12 poz.

Twórcy

autor

Wang L.

autor

Fan B.

autor

Wang Z.

autor

Cheng X.

autor

Wu Y.

autor

Chen L.

• Institute of Precision Optical Engineering, Department of Physics, Tongji University, Shanghai, 200092, China

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