Electrical properties of tin phthalocyanine-based heterostructures: SnPcCl2/GaP, SnPcCl2/InP and SnPcCl2/GaAs

• Autorzy: El-Nahass M. M. , Farid A. M. , Amer H. H. , Abdel-Rahman K. F. , Ali H. A. M.
• Języki publikacji: EN

Abstrakty

EN

Electrical characteristics of organic/inorganic, SnPcCl2/GaP, SnPcCl2/GaAs and SnPcCl2/InP (Pc standing for phthalocyanine) heterojunctions were studied. Current density-voltage (J-V) characteristics showed thermionic emission conduction at relatively low voltages followed by a space charge limited conduction mechanism at relatively high voltages. The capacitance-voltage (C-V) characteristics indi cated that the devices have an abrupt nature. Various parameters have been determined from the J-V and C-V analysis for the three devices.

Słowa kluczowe

EN

phthalocyanines; organic/inorganic heterojunction

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2009
• Tom: Vol. 27, No. 2
• Strony: 385--395
• Opis fizyczny: Bibliogr. 23 poz.

Twórcy

autor

El-Nahass M. M.

autor

Farid A. M.

autor

Amer H. H.

autor

Abdel-Rahman K. F.

autor

Ali H. A. M.

• Faculty of Education, Ain Shams University, Cairo, Egypt

Bibliografia

• [1] VEAREY-ROBERTS A.R., EVANS D.A., Appl. Phys. Lett., 86 (2005), 072105.
• [2] SO F.F., FORREST S.R., J. Appl. Phys., 63 (1988), 442.
• [3] ABDEL-MALIK T.G., ABDEL-LATIF R.M., Thin Solid Films, 305 (1997), 336.
• [4] GOULD R.D., SHAFAI T.S., Superfic., 9 (1999), 226.
• [5] SAMUEL M.,MENON C. S., UNNIKRISHNAN N. V., Mater. Sci.-Poland, 25 (2007), 177.
• [6] PEUMANS P., BULOVIC V., FORREST S.R., Appl. Phys. Lett., 76 (2000), 2650.
• [7] ZHOU X., PFEIFFER M., BLOCHWITZ J., WERNER A., NOLLAU A., FRITZ T., LEO K., Appl. Phys. Lett.,78 (2001), 410.
• [8] NEWTON M.I., STARKE T.K.H.,WILLIS M.R.,MCHALE G., Sensors Act. B, 67 (2000), 307.
• [9] KWONG C.Y., DJURISIC A.B., CHUI P.C., LAM L.S.M., CHAN W.K., Appl. Phys. A, 77 (2003), 555.
• [10] PEISERT H., SCHWEIGER T., KNUPFER M., GOLDEN M.S., FINK J., J. Appl. Phys., 88 (2000), 1535.
• [11] RIAD A.S., Thin Solid Films, 370 (2000), 253.
• [12] TAKADA J., AWAJI H., KOSHIOKA M., NEVIN W.A., J. Appl. Phys., 75 (1994), 4055.
• [13] LEE H.Y., KANG Y.S., JANG M.S., TANAKA H., KAWAI T., J. Korean Phys. Soc., 37 (2000), 475.
• [14] MORGAN D.V., ALIYU Y., BUNCE R.W., Phys. Stat. Sol. (a), 133 (1992), 77.
• [15] SHARMA G.D., SANGODKAR S.G., ROY M.S., Mat. Sci. Eng. B, 41 (1996), 222.
• [16] FORREST S.R., KAPLAN M.L., SCHMIDT P.H., J. Appl. Phys., 60 (1986), 2406
• [17] SHARMA G.D., GUPTA S.K., ROY M.S., Thin Solids Films, 333 (1998), 176.
• [18] EL-NAHASS M.M., ABD-EL-RMAN K.F., AL-GHAMDI A.A., ASIRI A.M., Physica B, 344 (2004), 398.
• [19] GOULD R.D., J. Phys. D, 9 (1986), 1785.
• [20] BAYHAN H., OZDEN S., Turk. J. Phys., 29 (2005), 371.
• [21] CZERWINSKI A., SIMOEN E., POYAI A., CLAEYS C., J. Appl. Phys., 94, (2003), 1218.
• [22] RIAD A.S., DARWISH S., AFIFY H.H., Thin Solid Films, 391 (2001), 109.
• [23] DARWISH S., EL ZAWAWI I.K., RIAD A.S., Thin Solid Films, 485 (2005), 182.