Reducing the density of threading dislocations in GaAs epitaxial layers. Efficiency assessment of isovalent Bi doping and Pb doping

• Autorzy: Baganov Y. E. , Krasnov V. , Lebed O. , Lebed O. , Shutov S.
• Języki publikacji: EN

Abstrakty

EN

Processes of motion of threading dislocations associated with isovalent doping of epitaxial layers were considered. An exact solution was obtained for the gliding distance of dislocations under strains. It was shown that the effectiveness of doping for reducing the density of threading dislocations in an epitaxial layer depends on the product of the surface density of the dislocations in the substrate and the lateral size of the substrate. An analysis of the effectiveness of isovalent Bi doping and standard Pb doping in reducing the density of threading dislocations in GaAs epitaxial layers and the range of applicability has been presented.

Słowa kluczowe

EN

isovalent doping; dislocations; GaAs; Bi (bismuth); Pb

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2009
• Tom: Vol. 27, No. 2
• Strony: 355--363
• Opis fizyczny: Bibliogr. 19 poz.

Twórcy

autor

Baganov Y. E.

autor

Krasnov V.

autor

Lebed O.

autor

Lebed O.

autor

Shutov S.

• Kherson National Technical University, 24 Berislavskoye shosse Kherson, 73008, Ukraine

Bibliografia

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