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Processes of motion of threading dislocations associated with isovalent doping of epitaxial layers were considered. An exact solution was obtained for the gliding distance of dislocations under strains. It was shown that the effectiveness of doping for reducing the density of threading dislocations in an epitaxial layer depends on the product of the surface density of the dislocations in the substrate and the lateral size of the substrate. An analysis of the effectiveness of isovalent Bi doping and standard Pb doping in reducing the density of threading dislocations in GaAs epitaxial layers and the range of applicability has been presented.
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Czasopismo
Rocznik
Tom
Strony
355--363
Opis fizyczny
Bibliogr. 19 poz.
Twórcy
autor
autor
autor
autor
autor
- Kherson National Technical University, 24 Berislavskoye shosse Kherson, 73008, Ukraine
Bibliografia
- [1] SAUL R.H., J. Electrochem. Soc., 118, (1971), 793.
- [2] KOVALENKO V.F., KRASNOV V.A., PROKHOROVICH A.V., Optoelectr. Poluprov.Tekh., 6 (1984), 71, (in Russian).
- [3] KRESSEL H., NELSON H., Properties and Applications of III–V Compound Films Deposited by Liquid-Phase Epitaxy, in Physics of Thin Films, Vol. 7, G. Hass, M.H. Francombe, R.W. Hoffman (Eds.) Academic Press, New York, 1973.
- [4] VASILENKO N.D., GORODNICHENKO O.K., KRASNOV V.A., Proc. 5th Int. Conf. on Properties and Structure of Dislocations in Semiconductors, Moscow, 57, (1986) (in Russian).
- [5] KOTELEVSKIJ A.A., KRASNOV V.A., LUBJANAJA M.D., FILIPPOV N.N., Crystallization and Crystal Properties, Novocherkassk, Vol. 50 (1987) (in Russian).
- [6] WALUKIEWICH W., Appl. Phys. Lett., 54 (1989), 2009.
- [7] SOLOVJOVA E.V., MILVIDSKIJ M.G., Fiz. Tekh. Poluprov., 17 (1983), 2002 (in Russian).
- [8] MARTISOV M.YU., Sov. Phys. Semicond., 26 (1992), 462.
- [9] MATTHEWS W.J., BLAKESLEE A.E., MADER S., Thin Solid Films, 33 (1976), 253.
- [10] PEACH M., KOEHLER J.S., Phys. Rev., 80 (1950), 436.
- [11] ROMANOV E., POMPE W., MATHIS S., BELTZ G.E., SPECK J.S., J. Appl. Phys., 85 (1999), 182.
- [12] MATTHEWS J.W., MADER S., LIGHT T.B., J. Appl.Phys., 41, 3800, (1970).
- [13] LIU X.W., HOPGOOD A.A., USHER B.F., WANG H., BRAITHWAITE N.S.J., Semicond. Sci. Technol., 14 (1999), 1154.
- [14] BRAUN K., BRIGGS M., BÖNI P., J. Cryst. Growth, 241 (2002), 231.
- [15] CORLESS R.M., GONNET G.H., HARE D.E.G., JEFFREY D.J., KNUTH D.E., Adv. Comp. Math., 5 (1996), 329.
- [16] MATTHEWS J.W., BLAKESLEE A.E., J. Cryst. Growth, 27 (1974), 118.
- [17] EL-MASRY N.A., TARN J.C., KARAM N.H., J. Appl. Phys., 64 (1988), 3672.
- [18] GANINA N.V., Phys. Chem. Sol. State, 3 (2002), 565 (in Russian).
- [19] NASHELSKIY A.YA., Single Crystals of Semiconductors, Metallurgy, Moscow, 1978 (in Russian).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0011-0091