Tytuł artykułu
Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Języki publikacji
Abstrakty
Highly transparent and conductive scandium doped zinc oxide (ZnO/Sc) films were prepared on Corning glass 7059 substrates by the sol-gel technique. The influence of scandium concentration (0-1.5 wt. %) and annealing temperature (300-500 °C) on the structural, optical and electrical properties was investigated. The average transmittance was found to be above 89% in the visible region. ZnO/Sc film having 0.5 wt. % of Sc and annealed at 400 °C exhibited a minimum resistivity of 3.52×10-4 ohmocm. The surface morphology of these films examined by SEM and AFM revealed formation of nano rods.
Słowa kluczowe
Wydawca
Czasopismo
Rocznik
Tom
Strony
225--237
Opis fizyczny
Bibliogr. 35 poz.
Twórcy
autor
autor
autor
autor
- Department of Electronic Science, University of Delhi South Campus, New Delhi - 110 021, India
Bibliografia
- [1] RONOVICH J.A., GOLMOYA D., BUBE R.H., J. Appl. Phys., 51 (1980), 4260.
- [2] SRIKANT V., CLARKE D.R., J. Appl. Phys., 81 (1997), 6357.
- [3] MINAMI T., NATO H., TAKAT A.S., Thin Solid Films, 124 (1985), 43.
- [4] CHOPRA K.L., MAJOR S., PANDYA D.K., Thin Solid Films, 102 (1983), 1.
- [5] WEIBENRIEDER K.S., MULLER J., Thin Solid Films, 300 (1997), 30.
- [6] SEOK-SOON K., JUN-HO Y., YUNG-EUN S., Solar Energy Mat. Solar Cells, 79 (2003), 495.
- [7] MAJOR S., KUMAR S., BHATNAGAR M., CHOPRA K.L., Appl. Phys. Lett., 49 (1986), 394.
- [8] HU J., GORDON R.G., J. Appl. Phys., 72 (1992), 5381.
- [9] BIXIA L., ZHUXI F., YUNBO J., Appl. Phys. Lett., 79 (2001), 943.
- [10] MALIK A., SECO A., NUNES P., VIEIRA M., MRS Displays Technologies, 471 (San Francisco, USA, 2–8 April 1997).
- [11] TANG W., CAMERON D.C., Thin Solid Films, 238 (1994), 83.
- [12] CHANG J.F., LIN W.C., HON M.H., Appl. Surf. Sci., 183 (2001), 18.
- [13] MINAMI T., YAMAMOTO T., MIYATA T., Thin Solid Films, 366 (2000), 63.
- [14] NUNES P., FORTUNADEO E., MARTINS R., Thin Solid Films, 383 (2001), 277.
- [15] ROTH A.P., WILLIAMS D.F., J. Appl. Phys., 52 (1981), 6685.
- [16] LU Y.F., NI H.Q., MAI Z.H., REN Z.M., J. Appl. Phys., 88 (2000), 498.
- [17] JIANG X., WONG F.L., FUNG M.K., LEE S.T., Appl. Phys. Lett., 83 (2003), 1875.
- [18] JIMÉNEZ-GONZÁLEZ A.E., SOTO URUETA J.A., SUÁREZ-PARRA R., J. Crystal Growth, 192 (1998), 430.
- [19] CHATELON J.P., TERRIER C., BERNSTEIN E., BERJOAN R., ROGER J.A., Thin Solid Films, 247 (1994), 162.
- [20] VANDER P., Philips Res. Repts., 13 (1958), 1.
- [21] AZAROFF L.V., Elements of X-ray Crystallography, McGraw Hill, New York, 1968.
- [22] MINAMI T., SATO H., TAKAT A.S., OGAWA N., MOURI T., Jpn. J. Appl. Phys., 31 (1992) , L 1106.
- [23] TAKADA S., J. Appl. Sci., 73 (1993), 4739.
- [24] MATSUOKA M., HOSHI Y., NAOE M., J. Appl. Phys., 63 (1998), 2098.
- [25] SARKAR A., GHOSH S., PAL A.K., Thin Solid Films, 204 (1991), 255.
- [26] SZEYRBOWSKI J., DIETRICH A., HOFFMANN H., Phys. Stat. Sol. a,78 (1983), 243.
- [27] MINAMI T., YAMAMOTO T., MIYATA T., Thin Solid Films, 64 (2000), 63.
- [28] TANG W., CAMERON D.C., Thin Solid Films, 238 (1994), 83.
- [29] MINAMI T., NANTO H., TAKATA S., Jpn. J. Appl. Phys., 71 (1992), 880.
- [30] MOSS T.S., Proc. Phy. Soc. London., B 67 (1954), 775.
- [31] DIETZ R.E., HOPFIELD J.J., THOMOS G.D., J. Appl. Phys., 32 (1961), 2282.
- [32] AUVERGNE D., CAMASSEL J., MATHIEU H., Phys. Rev. B, 11 (1975), 2251.
- [33] MINAMI T., YAMANISHI M., KAWAMURA T., KUBO U., Jpn. J. Appl. Phys., 15 (1976), 1117.
- [34] WOLF P.A., Phys. Rev., 126 (1962), 405.
- [35] MAJOR S., BANERJEE A., CHOPRA K.L., Thin Solid Films, 125 (1985), 179.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0011-0079