Characterization of oxidic and organic materials with synchrotron radiation based XPS and XAS

• Autorzy: Schmeisser D. , Tallarida M. , Henkel K. , Müller K. , Mandal D. , Chumakov D. , Zschech E.
• Języki publikacji: EN

Abstrakty

EN

The use of synchrotron radiation (SR) based X-ray absorption spectroscopy (XAS) and X-ray induced photoelectron spectroscopy (XPS) is demonstrated for the analysis of thin films. In the first part we report on oxidic films used for high-k dielectric films in Si technology and focus on a recent in-situ approach to study the atomic layer deposition growth of HfO2 films. We demonstrate that even hidden layers can be characterized by using fluorescence technologies. In the second part, we demonstrate the suitability of SR based techniques for the analysis of organic thin films. Here, the first example deals with P(VDF-TrFE), a ferroelectric polymer, with possible applications in non-volatile memory devices. Another example concerns the analysis of C60 based low-k polymers for use in Cu interconnect systems.

Słowa kluczowe

EN

synchrotron radiation spectroscopy; HfO2; high-k oxide; ultralow-k polymers

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2009
• Tom: Vol. 27, No. 1
• Strony: 141--157
• Opis fizyczny: Bibliogr. 43 poz.

Twórcy

autor

Schmeisser D.

autor

Tallarida M.

autor

Henkel K.

autor

Müller K.

autor

Mandal D.

autor

Chumakov D.

autor

Zschech E.

• Applied Physics Sensors, Brandenburg Technical University Cottbus, 03046 Cottbus, Konrad-Wachsmann-Allee 17, Germany

Bibliografia

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