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Abstrakty
SnO2 thin films, being n-type semiconductors, have wide application in the field of sensor technology. They are obtained by a wet chemical process, using SnCl2o2H2O as a tin containing precursor. The films thus obtained were subjected to optical, X-ray diffraction (XRD), microstructural, FTIR and Raman studies.
Słowa kluczowe
Wydawca
Czasopismo
Rocznik
Tom
Strony
123--129
Opis fizyczny
Bibliogr. 15 poz.
Twórcy
autor
- Department of Physics, Asansol Engineering College, Asansol 713304, India
Bibliografia
- [1] SALEHI A., Thin Solid Films, 416 (2002), 260.
- [2] KOHL D., J. Phys. D. Appl. Phys., 34 (2001), R125.
- [3] MO Y., OKAWA Y., NAKAI T., TAJIMA M., NATUKAWA K., Thin Solid Films, 416 (2002), 248.
- [4] GARDNER J.W., Sensors Actuators B, 4 (1991), 109.
- [5] IMAWAN C., SOLZBACHER F., STEFFES H., OBERMEIER E., Sensors Actuators B, 68 (2000), 184.
- [6] SCHWEBEL T., FLEISCHER M., MEIXNER H., Sensors Actuators B, 65 (2002), 176.
- [7] HAHN S.H., BARSAN N., WEIMAR U., Sensors Actuators B, 78 (2001), 64.
- [8] COBIANU C., SARANIU C., CICILIANO P., CAPONOE S., UTRIANIEN M., NINISTO L., Sensors Actuators B, 77 (2001), 496.
- [9] GORDILLO G., MORENO L.C., DELA CRUZ W., TEHERAN P., Thin Solid Films, 252 (1994), 61.
- [10] BHATTCHARYYA D., CHAUDHURI S., PAL A.K., Vacuum 4 (1992), 313.
- [11] MOSS T.S., Optical Properties of Semiconductors, Butterworths, London, 1959, p. 34.
- [12] CHEN D., GAO L., J. Colloid Interface Sci., 279 (2004), 137.
- [13] PEERCY P.S., MOROSIN B., Phys. Rev. B, 7 (1973), 2279.
- [14] DIEGUEZ A., ROMANO-RODRIGUEZ A., VILA A., MORANTE J.R., J. Appl. Phys., 90 (2001), 1550.
- [15] YU K.N., XIONG Y., LIU Y., XIONG C., Phys. Rev. B, 55 (1997), 2666.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0011-0069