Investigations of photoresponse signals of LT-GaAs photodetector

• Autorzy: Białous M. , Świtkowski K. , Kozanecka-Szmigiel A. , Wierzbicki M. , Pura B.
• Języki publikacji: EN

Abstrakty

EN

In this paper, we demonstrate our electro-optic sampling system constructed for characterization of high-speed photodetectors based on low-temperature-grown GaAs (LT-GaAs). Changes in the shape of electrical signals for different optical powers, voltage biases and positions of a probe beam have been shown. The obtained photoresponse of the investigated photodetector exhibits 0.9 ps (full width at half maximum).

Słowa kluczowe

EN

electro-optic sampling; ultrafast photodetectors; low-temperature-grown GaAs (LT-GaAs)

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2009
• Tom: Vol. 39, nr 1
• Strony: 161--167
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Białous M.

autor

Świtkowski K.

autor

Kozanecka-Szmigiel A.

autor

Wierzbicki M.

autor

Pura B.

• Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

Bibliografia

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• [6] KEIL U., DYKAAR D.R., Ultrafast pulse generation in photoconductive switches, IEEE Journal of Quantum Electronics 32(9), 1996, pp. 1664–1671.
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