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Absorptive CdTe films optical parameters and film thickness determination by the ellipsometric method

Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Ellipsometric detective method of refractive index, absorptive index and thickness of the film deposited on the substrate with some optical parameters has been developed. This method is applied for optical parameters and film thickness detecting in visible and near IR spectrum. Refraction index and film thickness dispersion has been studied. It has been determined that film refractive index (2.6 on average) is by 7% less than that of monocrystalline CdTe.
Czasopismo
Rocznik
Strony
585--600
Opis fizyczny
Bibliogr. 21 poz.,
Twórcy
autor
  • V.E. Lashkariov Institute of Semiconductor Physics NAS of Ukraine
Bibliografia
  • [1] LAAZIZ Y., BENNOUNA A., CHAHBOUN N., OUTZOURHIM A., AMEZIANE E.L., Optical characterization of low optical thickness thin films from transmittance and back reflectance measurements, Thin Solid Films 372(1–2), 2000, pp. 149–55.
  • [2] MUTHUKUMARASAMY N., BALASUNDARAPRABHU R., JAYAKUMAR S., KANNAN M.D., RAMANATHASWAMY P., Compositional dependence of optical properties of hot wall deposited CdSexTe1–x thin films, Physica Status Solidi A 201(10), 2004, pp. 2312–8.
  • [3] RUSU M., RUSU G.G., On the optical properties of evaporated CdTe thin films, Physics of Low Dimensional Structures No. 3/4, 2002, pp. 105–15.
  • [4] THUTUPALLI G.K.M., TOMLIN S.G., The optical properties of thin films of cadmium and zinc selenides and tellurides, Journal of Physics D: Applied Physics 9(11), 1976, pp. 1639–46.
  • [5] PAULSON P.D., XAVIER MATHEW, Spectroscopic ellipsometry investigation of optical and interface properties of CdTe films deposited on metal foils, Solar Energy Materials and Solar Cells 82(1–2), 2004, pp. 279–90.
  • [6] KORNIENKO K.N., ODARYCH V.A., POPERENKO L.V., VUICHIK M.V., Determination of optical parameters of CdTe films by principal angle ellypsometry, Functional Materials 13(1), 2006, pp. 179–82.
  • [7] MEHTA B.R., KUMAR S., SINGH K., CHOPRA K.L., Application of spectroscopic ellipsometry to study the effect of surface treatments on cadmium telluride films, Thin Solid Films 164, 1988, pp. 265–8.
  • [8] PEIRIS F.C., WEBER Z.J., CHEN Y., BRILL G., Optical properties of CdSexTe1–x epitaxial films studied by spectroscopic ellipsometry, Journal of Electronic Materials 33(6), 2004, pp. 724–7.
  • [9] BHATTACHARYA D., CHAUDHURI S., PAL A.K., Determination of optical constants and band gaps of bilayered semiconductor films, Vacuum 46(3), 1995, pp. 309–13.
  • [10] POHORYLES B., MORAWSKI A., Photoconductivity – a novel method of evaluation of thin semiconducting film thickness, Thin Solid Films 301(1–2), 1997, pp. 122–5.
  • [11] BILEVYCH YE.O., BOKA A.I., DARCHUK L.O., GUMENJUK-SICHEVSKA J.V., SIZOV F.F., BOELLING O., SULKIO-CLEFF B., Properties of CdTe thin films prepared by hot wall epitaxy, Semiconductor Physics, Quantum Electronics and Optoelectronics 7(2), 2004, pp. 129–32.
  • [12] BILEVYCH YE., SOSHNIKOV A., DARCHUK L., APATSKAYA M., TSYBRII Z., VUYCHIK M., BOKA A., SIZOV F., BOELLING O., SULKIO-CLEFF B., Influence of substrate materials on the properties of CdTe thin films grown by hot-wall epitaxy, Journal of Crystal Growth 275(1–2), 2005, pp. e1177–e1181.
  • [13] ODARYCH V.A., , Zavod. Labor. 43(9), 1977, p. 1093 (in Russian).
  • [14] AZZAM R.M.A., BASHARA N.M., Ellipsometry and Polarized Light, North-Holland Publ., Amsterdam, New York, Oxford, 1977, p. 583.
  • [15] GORSHKOV M.M., Ellipsometry, Sov. Radio, Moscow, 1974, p. 200 (in Russian).
  • [16] DAGMAN E.E., Complete solution of the inverse problem in ellipsometry for a single-layer system with variations in film thickness, Optics and Spectroscopy 66(1), 1989, pp. 101–4; (original: Optika i Spektroskopiya 66(1), 1989, pp. 174–9).
  • [17] ODARYCH V.A., PANASYUK V.I., STASCHUK V.S., Zhurnal Prikladnoi Spektroskopii 56(5/6), 1992, p. 827 (in Russian); BYATEC M.A., KUSCH V.T., ODARYCH V.A., PANASYUK V.I., Visn. Kiev Univ. (Fiz.-Mat.) No. 7, 1992, p. 7 (in Ukrainian).
  • [18] CHADI D.J., WALTER J.P., COHEN M.L., PETROFF Y., BALKANSKI M., Reflectivities and electronic band structures of CdTe and HgTe, Physical Review B: Solid State 5(8), 1972, pp. 3058–64.
  • [19] JOHS B., HERZINGER C.M., DINAN J.H., CORNFELD A., BENSON J.D., Development of a parametric optical constant model for Hg1–xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth, Thin Solid Films 313/314(1–2), 1998, pp. 137– 42.
  • [20] MARPLE D.T.F., EHRENREICH H., Dielectric constant behavior near band edges in CdTe and Ge, Physical Review Letters 8(3), 1962, pp. 87–9.
  • [21] ADACHI S., KINURA T., SUZUKI N., Optical properties of CdTe: experiment and modeling, Journal of Applied Physics 74(5), 1993, pp. 3435–41.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0009-0053
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