Distribution of electronic states in amorphous Zn-P thin films on the basis of optical measurements

• Autorzy: Jarzabek B. , Weszka J. , Cisowski J.
• Języki publikacji: EN

Abstrakty

EN

Transmission and fundamental reflectivity studies, completed on amorphous Zn-P thin films, allowed us to obtain parameters describing the fundamental absorption edge, i.e., the optical pseudogap EG, Urbach energy EU and exponential edge parameter ET. All these data, together with the results of earlier transport measurements, have been utilized in developing simple models of electronic structure (distribution of electronic states) for amorphous Zn-P thin films of two compositions, i.e., Zn57P43 (near stoichiometry of Zn3P2) and Zn32P68 (near stoichiometry of ZnP2).

Słowa kluczowe

EN

amorphous semiconductors; thin films; absorption coefficient; model of electronic structure

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2008
• Tom: Vol. 38, nr 3
• Strony: 575--583
• Opis fizyczny: Biblipogr. 29 poz.,

Twórcy

autor

Jarzabek B.

autor

Weszka J.

autor

Cisowski J.

Bibliografia

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