PL EN


Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników
Powiadomienia systemowe
  • Sesja wygasła!
Tytuł artykułu

Evidence for metastable behavior of Ga-doped CdTe

Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
In this paper, we report for the first time on persistent photoeffects in gallium doped CdTe. Persistent photoconductivity and photoinduced persistent absorption were observed at 77 K. Both effects quenched above 120 K. The photoeffects have been attributed to the metastable behavior of gallium in CdTe.
Czasopismo
Rocznik
Strony
559--565
Opis fizyczny
Bibliogr. 11 poz.,
Twórcy
autor
autor
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
Bibliografia
  • [1] PARK C.H., CHADI D.J., First-principles study of DX centers in CdTe, ZnTe, and CdxZn1–xTe alloys, Physical Review B: Condensed Matter 52(16), 1995, pp. 11884–90.
  • [2] DOBACZEWSKI L., KACZOR P., Photoionization of DX(Te) center in AlxGa1–x As: Evidence for a negative U-character of the defect, Physical Review B: Condensed Matter 44(16), 1991, pp. 8621–32, and references therein.
  • [3] MORI Y., YOKOTA T., OHKURA H., Metastable states observed by optical absorption of DX centers in AlxGa1–x As:Te, Japanese Journal of Applied Physics, Part 2: Letters 31(8A), 1992, pp. L1005–8.
  • [4] RYSKIN A.I., SHCHEULIN A.S., ONOPKO D.E., DX centers in ionic semiconductor CdF2:Ga, Physical Review Letters 80(13), 1998, pp. 2949–52. Evidence for metastable behavior of Ga-doped CdTe 565
  • [5] PINHEIRO M.V.B., KRAMBROCK K., Experimental evidence for the distinction between metastability and persistence in optical and electronic properties of bulk GaAs and AlGaAs, Brazilian Journal of Physics 29(4), 1999, pp. 806–9.
  • [6] BECLA P., WITT A., LAGOWSKI J., WALUKIEWICZ W., Large photoinduced persistant optical absorption in selenium doped AlSb, Applied Physics Letters 67(3), 1995, pp. 395–7.
  • [7] SEMALTIANOS N.G., KARCZEWSKI G., WOJTOWICZ T., FURDYNA J.K., Persistent photoconductivity and photoionization of deep electron traps in Ga-doped Cd1–xMnxTe, Physical Review B: Condensed Matter 47(19), 1993, pp. 12540 –9.
  • [8] STANKIEWICZ O., YARTSEV V.M., Photoionization of electron traps in Ga-doped Cd1–xMnxTe, Solid State Communications 95(2), 1995, pp. 75–8.
  • [9] PŁACZEK-POPKO E., NOWAK A., SZATKOWSKI J., SIERAŃSKI K., Capture barrier for DX centers in gallium doped Cd1–x MnxTe, Journal of Applied Physics 99(8), 2006, p. 083510-1.
  • [10] PŁACZEK-POPKO E., SZATKOWSKI J., BECLA P., Photoionization of DX-related traps in indium- and gallium-doped Cd1–x MnxTe, Physica B: Condensed Matter 340–342, 2003, pp. 886–9.
  • [11] MADELUNG O., SCHULZ M., WEISS H. [Eds], Landolt–Bornstein, Numerical Data and Functional Relationships in Science and Technoloy, Vol. 17 – Semiconductors, Springer Verlag Berlin 1982.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0009-0050
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.