Influence of the columnar structure of heteroepitaxial nitride layers on the transport of electrons

• Autorzy: Szyszka A. , Paszkiewicz B. , Paszkiewicz R. , Tłaczała M.
• Języki publikacji: EN

Abstrakty

EN

The influence of the columnar structure of heteroepitaxial nitride layers on electronic transport has been described within the model of thermionic emission of carriers through potential barriers formed at grain boundaries. Dependence of the potential barrier height on the material properties and applied external voltage has been calculated. Potential barriers heights for gallium nitride layers grown by the metalorganic vapour phase epitaxy method has been estimated to be in the range of 20-60 meV and 10-40 meV in the dark and under illumination, respectively.

Słowa kluczowe

EN

gallium nitride; columnar structure; electronic transport

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 1
• Strony: 221--227
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Szyszka A.

autor

Paszkiewicz B.

autor

Paszkiewicz R.

autor

Tłaczała M.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

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