Determination of indium and nitrogen content in four-component epitaxial layers of InxGa1-xAs1-yNy deposited on GaAs substrate

• Autorzy: Serafińczuk J. , Kozłowski J.
• Języki publikacji: EN

Abstrakty

EN

The paper presents a new method of determination of the percentage content of indium (x) and nitrogen (y) in four-component epitaxial layers of InxGa1-xAs1-yNy, based on a distance between a layer and a substrate reflection for rocking curves obtained from high resolution X-ray diffraction. In the method, a symmetrical (004) and at least two asymmetrical (e.g., (224) and (115)) reflections are taken into consideration. For the investigated ranges of the values of the x, y parameters of the four components, we have described the dependences of distances between reflections .delta..vpi.(004) = f1(x,y), .delta..vpi.(224) = f2(x,y), .delta..vpi.(115) = f3(x,y) based on the rocking curve simulation software HRS (High Resolution Simulation - Philips). Based on the result, we present a procedure which allows us to characterize parameters of the epitaxial layers. The properties of the proposed procedure have been verified on experimental examples.

Słowa kluczowe

EN

X-ray; epitaxial layer; InGaAsN

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 1
• Strony: 207--212
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Serafińczuk J.

autor

Kozłowski J.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Micro- and Nanostructure Metrology Group, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

• [1] TAKAGI S., Acta Cryst., 15 (1962), 1311.
• [2] TAKAGI S., J. Phys. Soc. Japan, 26 (1969), 1239.
• [3] TAUPIN D., Bull. Soc. Fran. Miner. Cryst., 87 (1964), 469.
• [4] PC-HRS high Resolution Simulation – User Guide, Philips Electronics N.V., 1993.
• [5] FEWSTER P. F., CURLING C. J., J. Appl. Phys., 62 (1987), 4154.
• [6] IBANEZ J., KUDRAWIEC R., MISIEWICZ J., SCHMIDBAUER M., HENINI M., HOPKINSON M., J. Appl. Phys., 100 (2006), 093522.