Anisotropic strain relaxation and surface morphology related to asymmetry in the formation of misfit dislocations in InGaAs/GaAs heterostructures

• Autorzy: Gelczuk Ł. , Dąbrowska-Szata M. , Serafińczuk J. , Masalska A. , Łusakowska E. , Dłużewski P.
• Języki publikacji: EN

Abstrakty

EN

Partially relaxed InGaAs/GaAs heterostructures with a small lattice mismatch (less than 1%), grown by metalorganic vapour-phase epitaxy have been studied by the transmission electron microscopy, atomic force microscopy as well as X-ray diffractometry. A regular network of 60st.?misfit dislocations formed at the (001) interface in two orthogonal <110>?crystallographic directions has been revealed. A close correspondence between distribution of the interfacial misfit dislocations and undulating surface morphology in the form of a characteristic cross-hatch pattern has been observed. The structural analysis applied for the samples oriented either in [110] or [110] perpendicular directions, using reciprocal lattice mapping, revealed anisotropic strain relaxation, related to the asymmetry in the formation of alfa ?and beta ?misfit dislocations along these both directions, respectively.

Słowa kluczowe

EN

terbium; palladium; TiO2; thin films; transparent oxide semiconductor

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 1
• Strony: 157--166
• Opis fizyczny: Bibliogr. 26 poz.

Twórcy

autor

Gelczuk Ł.

autor

Dąbrowska-Szata M.

autor

Serafińczuk J.

autor

Masalska A.

autor

Łusakowska E.

autor

Dłużewski P.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

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