SIMS depth profiling of thin boron nitride insulating films

• Autorzy: Cwil M. , Firek P. , Konarski P. , Werbowy A.
• Języki publikacji: EN

Abstrakty

EN

Secondary ion mass spectrometry (SIMS) has been used to determine depth profiles of thin boron nitride films adapted as insulators in metal-insulator-semiconductor (MIS) devices. The negative secondary ion detection has been chosen to overcome the sample surface charging due to Ar+ primary ion beam bombardment and to determine the elemental distribution without an electron flood gun treatment. Thin boron nitride films of 20-200 nm thickness were obtained by the radiofrequency plasma-assisted chemical vapour deposition method on Si-substrate with various flows of the gas source. The effect of silicon diffusion from the substrate into the insulator on nitrogen detection due to multiply charged Si ion mass interferences is observed. In order to entirely eliminate the silicon contribution to nitrogen signal in SIMS, we propose to produce BN film on two substrates (e.g., Si and GaAs) simultaneously and then to determine the nitrogen profile. The data obtained for MIS devices formed by covering the BN film with Al layer reveal also Al presence in the insulating film.

Słowa kluczowe

EN

SIMS; boron nitride; depth profiling; charging effects

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 1
• Strony: 135--141
• Opis fizyczny: Bibliogr. 11 poz.

Twórcy

autor

Cwil M.

autor

Firek P.

autor

Konarski P.

autor

Werbowy A.

• Tele&Radio Research Institute, ul. Ratuszowa 11, 03-450 Warsaw, Poland

Bibliografia

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