Influence of the deposition parameters of nucleation layer on the properties of thick gallium nitride layers

• Autorzy: Prażmowska J. , Korbutowicz R. , Paszkiewicz R. , Szyszka A. , Podhorodecki A. , Misiewicz J. , Tłaczała M.
• Języki publikacji: EN

Abstrakty

EN

Gallium nitride layers were grown on sapphire (0001) substrates on low temperature (LT)-GaN layer deposited by the HVPE method. HCl flow rates and deposition times of the nucleation layer were varied in the range of 8-10 cm3/min and 5-9 min (with the step of 2 min), respectively. Morphologies of LTGaN buffer layers and subsequent high temperature (HT)-GaN layers were examined by scanning electron microscopy. Photoluminescence spectra of HT-GaN layers were recorded which allowed us to evaluate the optical quality of thick HVPE HT-GaN layers.

Słowa kluczowe

EN

HVPE method; thick GaN layer; HT-GaN; LT-GaN; properties of thick gallium nitride; layers 85

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 1
• Strony: 79--85
• Opis fizyczny: Bibliogr. 18 poz.

Twórcy

autor

Prażmowska J.

autor

Korbutowicz R.

autor

Paszkiewicz R.

autor

Szyszka A.

autor

Podhorodecki A.

autor

Misiewicz J.

autor

Tłaczała M.

• Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

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