Technology and properties of GaAs doping superlattices

• Autorzy: Ściana B. , Radziewicz D. , Pucicki D. , Tłaczała M. , Sęk G. , Poloczek P. , Misiewicz J. , Kováč J. , Srnanek R. , Christofi A.
• Języki publikacji: EN

Abstrakty

EN

Heterojunction and doping superlattices are widely used in many advanced semiconductor devices such as resonant tunnelling diodes, optical modulators, cascade lasers, tunable light emitting diodes and photodetectors. These structures exhibit nonlinear electrooptical properties. Nonlinear processes are governed by the Franz-Keldysh effect and the band-filling effect in the n-i-p-i superlattices and by the quantum-confined Stark effect in the case of n-i-p-i multiple quantum well structures. The paper presents investigations of GaAs n-i-p-i and p-i-p-i doping superlattices grown by atmospheric pressure metal organic vapour phase epitaxy. The properties of the obtained structures were examined using: EC-V method, SIMS spectrometry, photoluminescence and photoreflectance spectroscopy.

Słowa kluczowe

EN

doping superlattice; .vdelta.-doping; AP MOVPE; photoreflectance; photoluminescence

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 1
• Strony: 71--78
• Opis fizyczny: Bibliogr. 8 poz.

Twórcy

autor

Ściana B.

autor

Radziewicz D.

autor

Pucicki D.

autor

Tłaczała M.

autor

Sęk G.

autor

Poloczek P.

autor

Misiewicz J.

autor

Kováč J.

autor

Srnanek R.

autor

Christofi A.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

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