Computer simulation of tuned and detuned GaInNAsSb QW VCSELs for long-wavelength applications

• Autorzy: Gutowski K. , Sarzała R.. P.
• Języki publikacji: EN

Abstrakty

EN

Ga0.62In0.38N0.023As0.95Sb0.027/GaN0.025As0.975 quantum wells (QWs) used in standard GaAs-based GaInNAsSb/GaNAs vertical-cavity surface-emitting diode lasers (VCSELs) exhibit at room temperature (RT) the highest optical gain for the 1422 nm wavelength. Its RT continuous-wave threshold current for the 5 m device is as low as only 0.68 mA. An increase in the QW active region temperature by about 100 K has been found to be followed by a shift of the gain spectrum of the above QW to the 1500 nm range. Therefore, a comprehensive computer simulation has been used to verify a possibility to highly detune GaAs-based GaInNAsSb/GaNAs VCSELs from the wavelength of 1422 nm to 1500 nm, closer to the wavelength used in the third generation of the fibre optical communication. Such a temperatureenhanced RT CW lasing operation of the 1500 nm VCSEL, with an active region identical to that of the 1422 nm one and the cavity properly re-designed for the 1500 nm wavelength, has been found to be reached at the threshold current as many as 17 times higher than that of the 1422 nm VCSEL.

Słowa kluczowe

EN

GaInNAsSb diode laser; 1500 nm VCSELs; threshold laser simulation

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 1
• Strony: 459--467
• Opis fizyczny: Bibliogr. 12 poz.

Twórcy

autor

Gutowski K.

autor

Sarzała R.. P.

• Laboratory of Computer Physics, Institute of Physics, Technical University of Łódź, ul. Wólczańska 219, 93-005 Łódź, Poland

Bibliografia

• [1] KONDOW M., UOMI K., NIWA A., KITATANI T., WATAHIKI S., YAZAWA Y., Jpn. J. Appl. Phys., 35 (1996), 1273.
• [2] HA W., GAMBIN V., WISTEY M., BANK S., YUEN H., KIM S., HARRIS J.S., Electron. Lett., 38 (2002), 277.
• [3] WISTEY M.A., Growth of 1.5 μm vertical cavity surface emitting lasers by molecular beam epitaxy, Doctoral Thesis, Stanford University (2005).
• [4] VOLZ K., GAMBIN V., HA W., WISTEY M.A., YUEN H., BANK S., HARRIS J.S., J. Cryst. Growth, 251 (2003), 360.
• [5] SARZAŁA R.P., NAKWASKI W., J. Phys.: Condens. Matter, 16 (2004), S3121.
• [6] SARZAŁA R.P., MENDLA P., WASIAK M., MAĆKOWIAK P., BUGAJSKI M., NAKWASKI W., Opt. Quant. Electron., 36 (2004), 331.
• [7] SARZAŁA R.P., IEEE J. Quant. Electron., 40 (2004), 629.
• [8] SARZAŁA R.P., Semicond. Sci. Tech., 19 (2004), 1122.
• [9] SARZAŁA R.P., Diode Lasers for 2nd Generation of Fibre Optical Communication: Physical Simulation of an Operation and Optimization of Selected Laser Structure, DSc Dissertation, Technical University of Łódź, Łódź, 2004
• [10] OSIŃSKI M., NAKWASKI W., Chapter 5 [in:] Vertical-Cavity Surface-Emitting Laser Devices, Berlin, Springer, 2003, p. 135.
• [11] WENZEL H.AND WÜNSCHE H.-J., IEEE J. Quant. Electron., 33 (1997), 1156.
• [12] GODDARD L.L., BANK S.R., WISTEY M.A., YUEN H.B., EAO Z.L., HARRIS J.S., J. Appl. Phys., 97 (2005), 83101.